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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC5387
DESCRIPTION
·High Breakdown Voltage : V
= 1200V (Min)
CBO
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Horizontal deflection output for high resolution display,
color TV.
·High speed switching applications.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 1200 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 5 V
Collector Current- Continuous 10 A
Collector Current- Pulse 20 A
B Base Current- Continuous 5 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
50 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC5387
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 600 V
Collector-Emitter Saturation Voltage IC= 8A; IB= 2A B 3.0 V
Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V
Collector Cutoff Current VCB= 1200V; IE= 0 1 mA
Emitter Cutoff Current VEB= 5V; IC= 0 10 μA
DC Current Gain IC= 1A ; VCE= 5V 15 35
DC Current Gain IC= 8A ; VCE= 5V 4.3 7.8
Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 1.7 MHz
Output Capacitance
I
= 0 ; VCB= 10V; f
E
= 1.0MHz
test
130 pF
t
stg
t
f
Storage Time 2.5 3.5 μs
Fall Time
I
CP
= 6A , I
= 1.2A;fH= 64kHz
B1(
)
end
0.15 0.3 μs
isc Website：www.iscsemi.cn
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