Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5386
DESCRIPTION
·With TO-3P(H)IS package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·Horizontal deflection output for high
resolution display,color TV
·High speed switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-Peak 16 A
IB Base current 4 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
℃)
PC Total power dissipation TC=25℃ 50 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5386
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 105 pF
fT Transition frequency IE=0.1A ; VCE=10V 1.7 MHz
Switching times
Collector-emitter breakdown voltage IC=10mA ;IB=0 600 V
Collector-emitt er saturation voltage IC=6A; IB=1.5A 3.0 V
Base-emitter saturation voltage IC=6A; IB=1.5A 1.5 V
Collector cut-off current VCB=1500V; IE=0 1.0 mA
Emitter cut-off current VEB=5V; IC=0 10 μA
DC current gain IC=1A ; VCE=5V 15 35
DC current gain IC=6A ; VCE=5V 4.3 7.5
ts Storage time 2.5 3.5 μs
tf Fall time
2
=5A;I
I
CP
f
=64kHz
H
B1(
end
=1.0A
)
0.15 0.3 μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5386
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5386
4
Loading...