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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5359
DESCRIPTION ·
·With TO-3PL package
·Complement to type 2SA1987
APPLICATIONS
·Power amplifier applications
·Recommend for 100W high fidelity audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
IB Base current 1.5 A
PC Collector power dissipation
Collector-base voltage Open emitter 230 V
Collector-emitter voltage Open base 230 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
180 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5359
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
I
CBO
I
EBO
h
FE-1
h
FE-2
BE
Collector-emitter breakdown voltage IC=50mA; IB=0 230 V
Collector-emitter saturation voltage IC=8 A;IB=0.8A 0.4 3.0 V
Base-emitter voltage IC=7A ; VCE=5V 1.0 1.5 V
Collector cut-off current VCB=230V ;IE=0 5 μA
Emitter cut-off current VEB=5V; IC=0 5 μA
DC current gain IC=1A ; VCE=5V 55 160
DC current gain IC=7A ; VCE=5V 35
fT Transition frequency IC=1A ; VCE=5V 30 MHz
COB Output capacitance IE=0; VCB=10V;f=1MHz 200 pF
h
classifications
FE-1
R O
55-110 80-160
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5359
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50mm)
3
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5359
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