Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC5354
DESCRIPTION
·High Collector-Emitter Breakdown Voltage : V
·High Switching Speed
APPLICATIONS
·High speed and high voltage switching applications.
·Switching regulator applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T
(BR)CEO
= 800V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
stg
Collector-Base Voltage 900 V
Collector-Emitter Voltage 800 V
Emitter-Base voltage 7 V
Collector Current-Continuous 5 A
Collector Current-Pulse 10 A
B Base Current-Continuous 2 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
100 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC5354
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching times
t
r
t
stg
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.0 V
Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.3 V
Collector Cutoff Current VCB= 800V; IE=0 0.1 mA
Emitter Cutoff Current VEB= 7V; IC=0 1.0 mA
DC Current Gain IC= 10mA; VCE= 5V 10
DC Current Gain IC= 0.5A; VCE= 5V 15
Rise Time 0.7
Storage Time 4.0
= 4A; IB1= 0.4A; IB2= -0.8A;
I
C
RL= 200Ω; PW=20μs;
VCC≈ 400V; Duty Cycle≤1%
μs
μs
t
f
isc Website：www.iscsemi.cn
Fall Time
2
0.5
μs
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