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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC5352
DESCRIPTION
·High Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulator and high voltage switching
applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T
= 400V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 600 V
Collector-Emitter Voltage 400 V
Emitter-Base voltage 7 V
Collector Current-Continuous 10 A
Collector Current-Peak 15 A
B Base Current-Continuous 5 A
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150
80 W
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC5352
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CE
V
BE
I
CBO
I
EBO
h
FE
(sat)
(sat)
Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V
Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 600 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.5A B 1.0 V
Base-Emitter Saturation Voltage IC= 4A; IB= 0.5A B 1.3 V
Collector Cutoff Current VCB= 480V ; IE=0 0.1 mA
Emitter Cutoff Current VEB= 7V; IC=0 1.0 mA
DC Current Gain IC= 1A ; VCE= 5V 20
Switching times
t
r
t
stg
Rise Time 0.5
Storage Time 2.0
= 0.5A; IB2= -1A; RL= 50Ω
I
B1
PW=20μs; Duty Cycle≤1%;
VCC≈200V
μs
μs
μs
t
f
Fall Time
0.3
isc Website：www.iscsemi.cn
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