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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC5305
DESCRIPTION
·High Breakdown Voltage
:V
·High Speed Switching
APPLICATIONS
·Designed for inverter lighting applications.
Absolute maximum ratings (T
= 1200V (Min)
(BR)CBO
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
Collector-Base Voltage 1200 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 9 V
Collector Current-Continuous 6 A
Collector Current-Peak 12 A
Collector Power Dissipation
=25℃
@T
a
Collector Power Dissipation
@TC=25℃
Junction Temperature 150
2
W
35
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC5305
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(
V
BE(
h
FE-1
h
FE-2
I
CBO
I
CES
I
EBO
sat
Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 600 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.0 V
)
sat
Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V
)
DC Current Gain IC= 0.3A; VCE= 5V 30 50
DC Current Gain IC= 2.5A; VCE= 5V 10
Collector Cutoff Current VCB= 600V; IE= 0 10
Collector Cutoff Current VCE= 1200V; RBE= 0 1.0 mA
Emitter Cutoff Current VEB= 9V; IC= 0 1.0 mA
Switching Times
μA
t
s
t
f
Storage Time 2.5
I
= 3.5A;IB1= 0.6A; IB2= -1.2A
C
Fall Time
0.15
μs
μs
isc Website：www.iscsemi.cn
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