Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5280
DESCRIPTION
·With TO-3P(H)IS package
·High voltage
·Low saturation voltage
·High speed
·Bult-in damper diode
APPLICATIONS
·High speed switching applications
·Horizontal deflection output for medium
resolution display,color TV
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Maximum absolute ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 16 A
IB Base current 4 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
50
W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5280
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=6A;IB=1.5 A 5 V
CEsat
V
Base-emitter saturation voltage IC=6A;IB=1.5 A 1.0 1.5 V
BEsat
V
Switching times
Emitter-base breakdown voltage IE=400mA;IC=0 5 V
(BR)EBO
I
Emitter cut-off current VEB=5V; IC=0 72 250 mA
EBO
I
Collector cut-off current VCB=1500V; IE=0 1 mA
CBO
h
DC current gain IC=1 A ; VCE=5V 10 35
FE-1
h
DC current gain IC=6A ; VCE=5V 4 8.5
FE-2
fT Transition frequency IE=0.1A ; VCE=10V 2 MHz
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 115 pF
VF Diode forward voltage IF=6A 1.4 1.8 V
t
Storage time 4 6
stg
tf Fall time
=6A;I
I
CP
=31.5kHz
f
H
B1(end)
=1.2A
0.2 0.5
μs
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5280
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5280
4
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