Datasheet 2SC5242,FJA4313 Datasheet

2SC5242/FJA4313 NPN Epitaxial Silicon Transistor

Applications

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier

Features

• High Current Capability: IC = 17A

• High Power Dissipation : 130watts

• High Frequency : 30MHz.

• High Voltage : V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1962/FJA4213.

• Thermal and electrical Spice models are available

• Same transistor is also available in:

--TO264 package, 2SC5200/FJL4315 : 150 watts

--TO220 package, FJP5200 : 80 watts

--TO220F package, FJPF5200 : 50 watts

CEO

=250V

January 2009

1

1.Base 2.Collector 3.Emitter

TO-3P

2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings* T

= 25°C unless otherwise noted

a

Symbol Parameter Ratings Units

BV

CBO

BV

CEO

BV

EBO

I

C

I

B

P

D

TJ, T

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* T

Collector-Base Voltage 250 V Collector-Emitter Voltage 250 V Emitter-Base Voltage 5 V Collector Current(DC) 17 A Base Current 1.5 A Total Device Dissipation(TC=25°C)

Derate above 25°C Junction and Storage Temperature - 50 ~ +150 °C

=25°C unless otherwise noted

a

130

1.04

Symbol Parameter Max. Units

R

θJC

* Device mounted on minimum pad size

Thermal Resistance, Junction to Case 0.96 °C/W

hFE Classification

W

W/°C

Classification R O

h

FE1

55 ~ 110 80 ~ 160

2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor

Electrical Characteristics* T

=25°C unless otherwise noted

a

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE1

h

FE2

VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V f

T

C

ob

* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%

Collector-Base Breakdown Voltage IC=5mA, IE=0 250 V Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ 250 V Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V Collector Cut-off Current VCB=230V, IE=0 5.0 µA Emitter Cut-off Current VEB=5V, IC=0 5.0 µA DC Current Gain VCE=5V, IC=1A 55 160 DC Current Gain VCE=5V, IC=7A 35 60

Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz Output Capacitance VCB=10V, f=1MHz 200 pF

Ordering Information

Part Number Marking Package Packing Method Remarks

2SC5242RTU C5242R TO-3P TUBE hFE1 R grade 2SC5242OTU C5242O TO-3P TUBE hFE1 O grade FJA4313RTU J4313R TO-3P TUBE hFE1 R grade FJA4313OTU J4313O TO-3P TUBE hFE1 O grade

Typical Characteristics

2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor

16

14

12

10

8

6

4

[A], COLLECTOR CURRENT

C

I

2

0

0 2 4 6 8 10 12 14 16 18 20

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain ( R grade )

o

C

Tj=25

o

Tj=-25

C

110

Ic[A ], C OLL ECT OR CURRENT

100

10

, DC CURRENT GAIN

FE

h

1

Tj=125

IB=200mA

IB = 180mA IB = 160mA IB = 140mA

IB = 120mA

IB = 100mA IB = 80mA

IB = 60mA

IB = 40mA

IB = 0

Vce=5V

o

Tj=125

100

10

, DC CURRENT GAIN

FE

h

1

o

C

Tj=25

o

Tj=-25

C

110

Vce=5V

Ic[A ], C OLL ECT OR CURRENT

10000

Ic=10 Ib

1000

o

Tj=25

C

o

Tj=125

100

10

Vce(sat)[mV], SATURATION VOLTAGE

C

o

C

Tj=-25

1

0.1 1 10

Ic[A], COL L ECT OR CURRE NT

Figure 3. DC current Gain ( O grade ) Figure 4. Collector-Emitter Saturation Voltage

12

10

8

6

4

[A], COLLECTOR CURRENT

2

C

I

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VBE[V], BASE-EMITTER VOLTAGE

VCE = 5V

10000

o

Tj=25

C

Tj=-25

1000

100

Vbe(sat)[mV], SATURATION VOLTAGE

0.1 1 10

Ic[A], COLLECTOR CURRENT

Ic=10Ib

o

C

o

C

Tj=125

Figure 5. Base-Emitter On Voltage Figure 6. Base-Emitter Saturation Voltage

Typical Characteristics

2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor

1.0

0.9

C / W]

o

[

0.8

thjc

0.7

0.6

0.5

0.4

0.3

0.2

0.1

1E-6 1E-5 1E-4 1E-3 0.01 0.1 1

Transient Thermal Resistance, R

Pulse duration [sec]

Figure 7. Thermal Resistance Figure 8. Safe Operating Area

160

140

120

100

80

60

40

[W], POWER DISSIPATION

C

P

20

0

0 25 50 75 100 125 150 175

TC[oC], CASE TEMPERATURE

-100

IC MAX. (Pulsed*)

-10

IC MAX. (DC)

-1

-0.1

*SINGLE NONREPETITIVE

[A], COLLECTOR CURRENT

C

I

PULSE TC=25[oC]

-0.01 110100

10ms*

100ms*

DC

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 9. Power Derating

Package Dimensions

15.60

0

ø

5 5

3.20

±0.10

13.60

9.60

±0.20

TO-3P

±0.20

3.80

4.80

1.50

±0.2

+0.1 –0.0

2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor

±0.20

12.76

19.90

23.40

13.90

2.00

±0.20

±0.30

±0.20

3.50

]

±0.30

16.50

3.00

±0.20

1.00

±0.20

5.45TYP

[5.45

±0.30

]

5.45TYP

[5.45

±0.20

18.70

1.40

0.60

±0.2

+0.1 –0.0

Dimensions in Millimeters

2SC5242/FJA4313 NPN Epitaxial Silicon Transistor2SC5242/FJA4313