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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5199
DESCRIPTION
·With TO-3PL package
·Complement to type 2SA1942
APPLICATIONS
·Power amplifier applications
·Recommended for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
IB Base current 1.2 A
PC Collector power dissipation
Collector-base voltage Open emitter 160 V
Collector-emitter voltage Open base 160 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
120 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5199
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
I
CBO
I
EBO
h
FE-1
h
FE-2
BE
Collector-emitter breakdown voltage IC=50mA ;IB=0 160 V
Collector-emitter saturation voltage IC=8A; IB=0.8A 2.5 V
Base-emitter on voltage IC=6A ; VCE=5V 1.5 V
Collector cut-off current VCB=160V; IE=0 5
Emitter cut-off current VEB=5V; IC=0 5
μA
μA
DC current gain IC=1A ; VCE=5V 55 160
DC current gain IC=6A ; VCE=5V 35
fT Transition frequency IC=1A ; VCE=5V 30 MHz
COB Collector output capacitance f=1MHz;VCB=10V 170 pF
h
classifications
FE-1
R O
55-110 80-160
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5199
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5199
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