NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD
PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low Noise
• NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
• NF = 1.3 dB
TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Super Mini-Mold package
EIAJ: SC-70
PACKAGE DIMENSIONS
(Units: mm)
2.1 ± 0.1
1.25 ± 0.1
ORDERING INFORMATION
PART
NUMBER
2SC5184-T13 000 units/reelEmbossed tape, 8 mm wide,
2SC5184-T23 000 units/reelEmbossed tape, 8 mm wide,
Remark: Contact your NEC sales representative to order samples for
evaluation (available in batches of 50).
QUANTITYARRANGEMENT
Pin No. 3 (collector)
facing the perforations
Pins No. 1 (emitter) and No. 2 (base)
facing the perforations
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base VoltageVCBO5V
Collector to Emitter VoltageVCEO3V
Emitter to Base VoltageVEBO2V
Collector CurrentI
Total Power DissipationPT90mW
Junction TemperatureTj150˚C
Storage TemperatureT
C30mA
stg–65 to +150˚C
+0.1
–0
0.3
2.0 ± 0.2
0.65 0.65
0.3
0.9 ± 0.1
T86
2
1
0 to 0.1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
3
+0.1
–0
0.3
Marking
+0.1
–0.05
0.15
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12108EJ2V0DS00 (2nd edition)
(Previous No. TC-2481)
Date Published November 1996 N
Printed in Japan
PARAMETERSYMBOLMIN.TYP.MAX.UNITCONDITIONS
Collector Cutoff CurrentICBO100nAVCB = 5 V, IE = 0
Emitter Cutoff CurrentIEBO100nAVEB = 1 V, IC = 0
DC Current GainhFE70140VCE = 2 V, IC = 20 mA
Insertion Power Gain (1)|S21e|
Insertion Power Gain (2)|S21e|
Noise Figure (1)NF1.32.0dBVCE = 2 V, IC = 3 mA, f = 2 GHz
Noise Figure (2)NF1.32.0dBVCE = 1 V, IC = 3 mA, f = 2 GHz
Gain Bandwidth Product (1)fT911GHzVCE = 2 V, IC = 20 mA, f = 2 GHz
Gain Bandwidth Product (2)fT79GHzVCE = 1 V, IC = 10 mA, f = 2 GHz
Feedback CapacitanceCre0.40.8pFVCB = 2 V, IE = 0 mA, f = 1 MHz
2
2
78.5dBVCE = 2 V, IC = 20 mA, f = 2 GHz
67.5dBVCE = 1 V, IC = 10 mA, f = 2 GHz
*1 Measured with pulses: Pulse width ≤ 350 µs, duty clcye ≤ 2 %, pulsed.
*2 Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
*1
2SC5184
*2
FE Class
h
ClassFB
MarkingT86
hFE70 to 140
2
Page 3
CHARACTERISTICS CURVES (TA = 25 ˚C)
2SC5184
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
100
- Total Power Dissipation - mW
T
P
90 mW
050100150
A
- Ambient Temperature - °C
T
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
200 A
180 A
15
160 A
140 A
120 A
10
- Collector Current - mA
C
I
5
100 A
80 A
µ
60 A
µ
40 A
µ
IB = 20 A
01.02.03.0
VCE - Collector to Emitter Voltage - V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
V
CE
= 2 V
40
30
20
- Collector Current - mA
10
C
I
00.51.0
BE
- Base to Emitter Voltage - V
V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
µ
µ
µ
µ
µ
µ
200
100
50
- DC Current Gain
FE
h
VCE = 2 V
VCE = 1 V
20
µ
10
125102050100
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
15
f = 2 GHz
10
5
- Gain Bandwidth Product - dB
T
f
1235710
IC - Collector Current - mA
VCE = 2 V
VCE = 1 V
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
10
f = 2 GHz
5
- Insertion Power Gain - dB
2
|
21e
|S
0
1235710
IC - Collector Current - mA
VCE = 2 V
VCE = 1 V
3
Page 4
2SC5184
NOISE FIGURE vs.
COLLECTOR CURRENT
3
2
VCE = 2 V
VCE = 1 V
NF - Noise Figure - dB
1
1235710
I
C
- Collector Current - mA
f = 2 GHz
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
2
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