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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC515
DESCRIPTION
·With TO-66 package
·High breakdown voltage
APPLICATIONS
·For use in line-operated color TV chroma
output circuits and sound output circuits
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.1 A
PD Total power dissipation TC=25℃ 6 W
Base
Fig.1 simplified outline (TO-66) and symbol
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 7 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC515
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=1mA; IB=0 300 V
(BR)CEO
Collector-base breakdown voltage IC=10μA; IE=0 300 V
(BR)CBO
Emitter-base breakdown voltage IE=10μA; IC=0 7 V
(BR)EBO
V
Collector-emitter saturation voltage IC=50mA; IB=5m A 2.0 V
CEsat
I
Collector cut-off current VCB=200V;IE=0 100 nA
CBO
I
Emitter cut-off current VEB=5V; IC=0 100 nA
EBO
hFE DC current gain IC=50mA ; VCE=10V 30 150
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC515
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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