Page 1
Po wer Transistors
2SC5104
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Features
■
●
High-speed switching
●
High collector to base voltage V
●
Wide area of safe operation (ASO)
●
Satisfactory linearity of foward current transfer ratio h
●
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
TC=25°C
Ta=25°C
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
=25˚C)
C
Ratings
500
500
400
7
6
3
1.2
30
1.3
150
–55 to +150
FE
Unit
V
V
V
V
A
A
A
W
˚C
˚C
10.0±0.310.5min.
10.0±0.3
2.0
4.4±0.5
2.0 1.5±0.1
123
8.5±0.2
6.0±0.5
5.08±0.5
213
8.5±0.2
6.0±0.3
5.08±0.5
1.5max.
0.8±0.1
2.54±0.3
0.8±0.1
2.54±0.3
–0.4
+0
1.5
R0.5
R0.5
1.1 max.
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Unit: mm
3.4±0.3
1.0±0.1
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
–0.2
+0.4
3.0
4.4±0.5
0 to 0.4
14.7±0.5
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
C
Conditions
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.2A, f = 1MHz
IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
VCC = 200V
min
400
10
8
typ10max
100
100
40
1.0
1.5
1.0
3.0
0.3
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SC5104
PC—Ta IC—V
40
)
W
(
(1)
C
30
20
10
(2)
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
100
)
V
(
30
BE(sat)
10
3
TC=–25˚C
1
25˚C
0.3
Base to emitter saturation voltage V
0.1
0.1 1 10 1000.3 3 30
Collector current IC (A
=Ta
(1) T
C
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
=1.3W)
(P
C
V
BE(sat)—IC
125˚C
IC/IB=5
)
CE
6
5
)
A
(
4
C
3
2
Collector current I
1
0
012108264
)
Collector to emitter voltage VCE (V
hFE—I
1000
FE
300
100
TC=125˚C
30
10
3
Forward current transfer ratio h
1
0.01 0.1 1 100.03 0.3 3
–25˚C
25˚C
Collector current IC (A
TC=25˚C
IB=500mA
400mA
300mA
200mA
100mA
50mA
C
VCE=5V
)
)
100
V
(
30
CE(sat)
10
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
100
)
30
MHz
(
T
10
0.3
Transition frequency f
0.1
V
CE(sat)—IC
TC=100˚C
25˚C
3
1
0.1 1 10 1000.3 3 30
–25˚C
Collector current IC (A
fT—I
C
VCE=10V
f=1MHz
T
C
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IC/IB=5
)
=25˚C
)
Cob—V
1000
)
pF
(
300
ob
100
30
10
3
Collector output capacitance C
1
1 3 10 30 100
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
=25˚C
T
C
)
ton, t
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01
04132
Collector current IC (A
, tf — I
stg
t
stg
t
on
C
Pulsed tw=1ms
Duty cycle=1%
=10
I
C/IB
=–IB2)
(2I
B1
V
=200V
CC
=25˚C
T
C
t
f
Area of safe operation (ASO)
100
30
)
10
A
I
(
Collector current I
)
CP
C
I
C
3
1
0.3
0.1
0.03
0.01
1 10 100 10003 30 300
Collector to emitter voltage VCE (V
10ms
Non repetitive pulse
=25˚C
T
C
t=1ms
300ms
)
Page 3
Po wer Transistors 2SC5104
Area of safe operation, reverse bias ASO
4.0
3.5
)
A
(
C
Collector current I
I
C
3.0
2.5
2.0
1.5
1.0
0.5
0
0 800200 600400 700100 500300
Collector to emitter voltage VCE (V
3
10
)
2
10
˚C/W
(
(t)
th
10
L
I
C/IB
(I
T
coil
B1
=25˚C
C
=–IB2)
=100µH
Reverse bias ASO measuring circuit
=5
T.U.T
I
I
B1
V
in
t
W
–I
B2
C
)
R
—t
th(t)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
L coil
V
V
clamp
CC
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
–1
–2
10
10
Time t (s
1010
110
10
)
3
2
4
10
3
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