Page 1
2SC5081
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 13.5 GHz Typ
• High gain, low noise figure
PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
CMPAK–4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
Page 2
2SC5081
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 0.4 0.75 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f
T
Power gain PG 15 18 — dB VCE = 5 V, IC = 20 mA,
Noise figure NF — 1.1 2.0 dB VCE = 5 V, IC = 5 mA,
Note: Marking is “ZD–”.
15——V I
——1 µAVCB = 12 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 90 160 VCE = 5 V, IC = 20 mA
10.5 13.5 — GHz VCE = 5 V, IC = 20 mA
15 V
8V
1.5 V
50 mA
100 mW
= 10 µA, IE = 0
C
= 8 V, RBE = ∞
CE
f = 900 MHz
f = 900 MHz
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
See characteristic curves of 2SC5080.
2
Page 3
Maximum Collector Dissipation Curve
120
(mW)
100
C
80
60
40
20
Collector Power Dissipation P
0 50 100 150
Ambient Temperature Ta (°C)
2SC5081
3
Page 4
0.3
0.3
+ 0.1
– 0.05
+ 0.1
– 0.05
2.0 ± 0.2
1.3 ± 0.2
0.65
0.65
0.65
0.6
1.25 ± 0.2
0.3
0.4
+ 0.1
– 0.05
+ 0.1
– 0.05
0.2
0.9 ± 0.1
0.425
1.25 ± 0.1
0.425
2.1 ± 0.3
+ 0.1
0.16
– 0.06
0 – 0.1
Unit: mm
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
CMPAK-4(T)
—
Conforms
0.006 g
Page 5
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Loading...