Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC508
DESCRIPTION
·With TO-66 package
·High collector-base breakdown voltage
:V
=180V(min)
CBO
APPLICATIONS
·For power switching and TV horizontal
output applications.
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 180 V
CBO
V
Collector-emitter voltage Open base 60 V
CEO
V
Emitter-base voltage Open collector 6 V
EBO
IC Collector current 4 A
PD Total power dissipation TC=25℃ 25 W
Tj Junction temperature 150 ℃
T
Storage temperature -65~200 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC508
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=30mA; IB=0 60 V
(BR)CEO
Collector-base breakdown voltage IC=1mA; IE=0 180 V
(BR)CBO
Emitter-base breakdown voltage IE=1mA; IC=0 6 V
(BR)EBO
V
Collector-emitter saturation voltage IC=4A; IB=0.4 A 1.5 V
CEsat
V
Base-emitter saturation voltage IC=4A; IB=0.4 A 1.5 V
BEsat
I
Collector cut-off current VCB=180V;IE=0 100 μA
CBO
I
Emitter cut-off current VEB=6V; IC=0 100 μA
EBO
hFE DC current gain IC=4A ; VCE=5V 20
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC508
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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