Page 1
2SC5078
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 12 GHz Typ
• High gain, low noise figure
PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz
ADE-208-221
1st. Edition
Outline
MPAK-4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
Page 2
2SC5078
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 0.3 0.8 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f
T
Power gain PG 14 17 20 dB VCE = 5 V, IC = 10 mA,
Noise figure NF — 1.6 2.5 dB VCE = 5 V, IC = 5 mA,
Note: Marking is “ZC–”.
——10µAVCB = 15 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 120 160 VCE = 5 V, IC = 10 mA
9 12 — GHz VCE = 5 V, IC = 5 mA
15 V
8V
1.5 V
20 mA
150 mW
= 8 V, RBE = ∞
CE
f = 900 MHz
f = 900 MHz
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
Page 3
2SC5078
Maximum Collector Dissipation Curve
150
(mW)
C
100
50
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
20
16
T
Collector Current
V = 5V
CE
12
DC Current Transfer Ratio vs.
Collector Current
250
V = 5V
FE
200
CE
150
100
50
DC Current Transfer Ratio h
0
15010050
0.1
1 10 100
Collector Current I (mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
5
I = 0
E
f = 1 MHz
2
1
8
V = 1V
CE
4
Gain Bandwidth Product f (GHz)
0
12 51020
Collector Current I (mA)
C
50
0.5
0.2
Collector Output Capacitance Cob (pF)
0.1
0.1 0.2 0.5 1 2 5 10 20
Collector to Base Voltage V (V)
CB
3
Page 4
2SC5078
Power Gain vs. Collector Current
20
V = 5V
CE
f = 900 MHz
16
12
f = 2 GHz
8
Power Gain PG (dB)
4
0
12 51020
Collector Current I (mA)
S21 Parameter vs. Collector Current
20
V = 1V
16
2
21
f = 1 GHz
12
Noise Figure vs. Collector Current
5
4
f = 2GHz
3
2
Noise Figure NF (dB)
1
f = 900MHz
V = 5V
CE
0
50
C
1
2
51020
Collector Current I (mA)
50
C
S21 Parameter vs. Collector Current
20
CE
16
2
21
f = 1 GHz
12
8
21
4
S parameter |S | (dB)
f = 2 GHz
0
12 51020
Collector Current I (mA)
C
50
f = 2 GHz
8
21
4
S parameter |S | (dB)
V = 5V
CE
0
12 51020
Collector Current I (mA)
C
50
4
Page 5
2SC5078
S11 Parameter vs. Frequency
1
.8
.6
.4
.2
–.6
.6
–.8
.8
CE
1
–1
.4
0
–.2
.2
–.4
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
(I = 10 mA)
S12 Parameter vs. Frequency
120°
150°
180°
–150°
–120°
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
1.5
1.5
234
–1.5
C
C
90°
–90°
CE
(I = 5 mA)
C
(I = 10 mA)
C
2
3
4
5
10
10
5
–10
–5
–4
–3
–2
Ω
Scale: 0.03 / div.
60°
30°
–30°
–60°
Ω
S21 Parameter vs. Frequency
Scale: 3 / div.
180°
150°
–150°
90°
120°
–120°
Condition: V = 5 V , Zo = 50
–90°
CE
60°
30°
0°
–30°
–60°
Ω
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
(I = 10 mA)
C
S22 Parameter vs. Frequency
1
.8
.6
.4
.2
–.6
.6
.4
.8
–.8
–1
CE
0°
0
–.2
.2
–.4
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
1.5
1.5
234
1
–1.5
(I = 5 mA)
C
(I = 10 mA)
C
2
3
4
5
10
10
5
–10
–5
–4
–3
–2
Ω
5
Page 6
0.4
+ 0.1
– 0.05
2.95 ± 0.2
1.9 ± 0.2
0.95 0.95
0.4
+ 0.1
– 0.05
0.65
0.16
+ 0.1
– 0.06
Unit: mm
0.4
+ 0.1
– 0.05
0.95
1.8 ± 0.2
0.85
0.6
+ 0.1
– 0.05
0.3
+ 0.2
1.1
1.5 ± 0.15
0.65
– 0.1
+ 0.2
– 0.6
2.8
Hitachi Code
JEDEC
EIAJ
Weight
0 – 0.1
(reference value)
MPAK-4
—
Conforms
0.013 g
Page 7
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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products.
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