Datasheet 2SC4988 Datasheet (HIT)

2SC4988

Silicon NPN Epitaxial

Application

VHF / UHF wide band amplifier

Features

• High gain bandwidth product

fT = 8.5 GHz Typ

• High gain, low noise figure

PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz

ADE-208-004

1st. Edition

Outline

UPAK

1

2

3

4

1. Base

2. Collector

3. Emitter

4. Collector (Flange)

2SC4988

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. This value is allowed when using the alumina ceramics board (12.5 x 20 x 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector cutoff current I

Emitter cutoff current I
DC current transfer ratio h

CBO

I

CEO

EBO

FE

Collector output capacitance Cob — 1.1 1.6 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f

T

Power gain PG 7.5 10.5 — dB VCE = 5 V, IC = 20 mA,

Noise figure NF — 1.3 2.5 dB VCE = 5 V, IC = 5 mA,

Note: Marking is “FR”.

15——V I

——1 µAVCB = 12 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 120 250 VCE = 5 V, IC = 20 mA

5.5 8.5 — GHz VCE = 5 V, IC = 20 mA

15 V
9V

1.5 V
100 mA

1

800*

= 10 µA, IE = 0

C

= 9 V, RBE = ∞

CE

mW

f = 900 MHz

f = 900 MHz

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

2

2SC4988

Collector Power Dissipation Curve

1600

1200

800

400

(on the alumina ceramic board)

Collector Power Dissipation Pc (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

Gain Bandwidth Product

vs. Collector Current

12

V = 5 V

CE

10

T

8

6

DC Current Transfer Ratio

vs. Collector Current

200

V = 5V

CE

FE

160

120

80

40

DC Current Transfer Ratio h

0

1 2 5 10 20 100

Collector Current I (mA)

C

Collector Output Capacitance vs.

Collector to Base Voltage

1.8
I = 0

E

f = 1 MHz

1.6

1.4

50

4

2

Gain Bandwidth Product f (GHz)

0

1 2 5 10 20 10050

Collector Current I (mA)

C

1.2

1.0

Collector Output Capacitance Cob (pF)

0.8

0.5

12 51020

Collector to Base Voltage V (V)

CB

3

2SC4988

Power Gain vs. Collector Current

20

V = 5V

CE

f = 900 MHz

16

12

8

Power Gain PG (dB)

4

0

1 2 5 10 20 10050

Collector Current I (mA)

C

20

16

2121

Noise Figure vs. Collector Current

5

V = 5V

CE

f = 900MHz

4

3

2

Noise Figure NF (dB)

1

0

1 2 5 10 20 10050

Collector Current I (mA)

S21 Parameter vs. Collector Current

V = 5V

CE

f = 1 GHz

C

12

8

4

S Parameter |S | (dB)

0

1 2 5 10 20 10050

Collector Current I (mA)

C

4

2SC4988

S11 Parameter vs. Frequency

1

.8

.6

.4

.2

–.6

.6

–.8

.8

CE

1.0

–1

.4

0

–.2

.2

–.4

Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)

(I = 5 mA)
(I = 20 mA)

S12 Parameter vs. Frequency

120°

150°

180°

–150°

–120°

Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)

1.5

1.5

234

–1.5

C
C

90°

–90°

CE

(I = 5 mA)

C

(I = 20 mA)

C

2

3

4

5

10

10

5

–10

–5

–4

–3

–2

Ω

Scale: 0.01 / div.

60°

30°

–30°

–60°

Ω

S21 Parameter vs. Frequency

Scale: 5 / div.

180°

150°

–150°

90°

120°

–120°

Condition: V = 5 V , Zo = 50

–90°

CE

60°

30°

0°

–30°

–60°

Ω

200 to 2000 MHz (200 MHz step)

(I = 5 mA)

C

(I = 20 mA)

C

S22 Parameter vs. Frequency

1

.8

.6

.4

.2

–.6

.6

.4

.8

–.8

–1

CE

0°

0

–.2

.2

–.4

Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)

1.5

1.5

234

1.0

–1.5

(I = 5 mA)

C

(I = 20 mA)

C

2

3

4

5

10

10

5

–10

–5

–4

–3

–2

Ω

5

2SC4988

S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω)

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

200 0.555 –66.6 9.68 124.7 0.0717 62.3 0.672 –39.7
400 0.328 –102.5 5.98 102.2 0.106 59.4 0.462 –49.8
600 0.225 –133.1 4.24 89.3 0.138 60.8 0.371 –53.4
800 0.185 –160.5 3.31 80.3 0.170 61.4 0.326 –56.4
1000 0.172 170.5 2.71 72.4 0.204 61.3 0.301 –59.9
1200 0.179 148.5 2.34 65.8 0.237 60.7 0.285 –63.6
1400 0.200 131.7 2.06 59.9 0.270 59.5 0.276 –68.2
1600 0.224 120.0 1.86 54.4 0.303 58.1 0.268 –73.2
1800 0.253 108.7 1.71 49.6 0.334 56.4 0.262 –78.7
2000 0.277 99.8 1.58 44.9 0.365 54.5 0.256 –84.7

S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω)

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

200 0.220 –101.8 13.13 106.0 0.0532 71.5 0.401 –48.6
400 0.135 –149.0 7.08 90.8 0.0946 73.6 0.277 –49.0
600 0.120 175.1 4.83 82.2 0.137 72.6 0.239 –50.1
800 0.132 148.0 3.70 75.5 0.178 70.8 0.221 –53.4
1000 0.155 129.6 3.02 69.5 0.220 68.2 0.212 –57.9
1200 0.174 117.3 2.58 63.9 0.258 65.6 0.205 –63.1
1400 0.196 105.5 2.26 58.8 0.296 62.9 0.201 –69.1
1600 0.225 97.8 2.04 54.1 0.331 60.3 0.197 –75.7
1800 0.246 92.0 1.86 50.0 0.364 57.5 0.193 –82.1
2000 0.267 84.5 1.72 45.7 0.397 54.7 0.190 –89.4

6

Unit: mm

0.53 Max

0.48 Max

4.5 ± 0.1

1.8 Max

1.5

1.5

3.0

1.5 ± 0.1

0.4

φ

1

0.44 Max

(1.5)

(2.5)

2.5 ± 0.1

4.25 Max

0.44 Max

(0.4)

(0.2)

0.8 Min

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

UPAK
—
Conforms

0.050 g

Cautions

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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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products.

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