Page 1
2SC4964
Silicon NPN Epitaxial
Application
VHF / UHF RF switch
Features
• Low Ron and high performance for RF switch.
• Capable of high density mounting.
Outline
ADE-208-005
1st. Edition
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
Page 2
2SC4964
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation
I
V
CBO
CEO
EBO
FE
CE(sat)
voltage
Collector output capacitance Cob — 1.2 1.6 pF VCB = 5 V, IE = 0, f = 1 MHz
On resistance Ron — 2.0 — Ω IB = 2.5 mA, f = 1 kHz
Note: Marking is “YV–”.
12——V I
——1 µAVCB = 10 V, IE = 0
——1 mAV
——10µAVEB = 3 V, IC = 0
100 250 600 VCE = 5 V, IC = 5 mA
— 200 300 mV IC = 80 mA, IB = 5 mA
12 V
8V
3V
100 mA
150 mW
= 10 µA, IE = 0
C
= 8 V, RBE = ∞
CE
2
Page 3
150
(mW)
C
100
Maximum Collector Dissipation Curve
500
FE
400
300
2SC4964
DC Current Transfer Ratio vs.
Collector Current
V = 5V
CE
50
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Collector Output Capacitance vs.
Collector to Base Voltage
2.8
2.4
2.0
1.6
1.2
Collector Output Capacitance Cob (pF)
0.8
0.5
12 51020
Collector to Base Voltage V (V)
I = 0
E
f = 1 MHz
CB
200
100
DC Current Transfer Ratio h
0
15010050
12 51020 50
Collector Current I (mA)
C
100
Gain Bandwidth Product vs.
Collector Current
2.0
V = 5V
CE
1.6
T
1.2
0.8
0.4
Gain Bandwidth Product f (GHz)
0
12 51020 50100
Collector Current I (mA)
C
3
Page 4
2SC4964
10
8
6
Ω
4
3
2
On Resistance Ron ( )
On Resistance vs. Base Current
f = 1kHz
Vin
100µF
2nF
Ron test circuit
R1(1k )Ω
2.7kΩ
D.U.T.
100µF
Vout
0.1 0.2 0.5 1 2 5110
Base Current I (mA)
Signal Reduction vs. Frequency
0
V = 0
B
- 10
- 20
V = 5V
B
- 30
- 40
Signal Reduction Rs (dB)
- 50
50
100 200 500 1000
Frequency f (MHz)
B
V
B
Signal Reduction test circuit
INPUT
33pF 33pF
2.7kΩ
2nF
V
B
L1 : Inside dia ø 3 mm ,
ø 0.5 mm Enameled Copper Wire 7 Turns.
Ron= R1
D.U.T.
Vout
Vin-Vout
L1
OUTPUT
4
Page 5
- 10
Signal Reduction vs. Frequency
0
V = 5V
B
2SC4964
Signal Reduction test circuit
- 20
- 30
- 40
Signal Reduction Rt (dB)
- 50
50
100 200 500 1000
V = 0
B
Frequency f (MHz)
L1
2nF
D.U.T.
2.7kΩ
V
B
INPUT
33pF 33pF
L1 , L2 : Inside dia ø 3 mm ,
ø 0.5 mm Enameled Copper Wire 7 Turns.
OUTPUT
L2
5
Page 6
Unit: mm
3 – 0.4
+ 0.10
– 0.05
0.95
1.9 ± 0.2
2.95 ± 0.2
0.95
0.65
+ 0.2
1.5 ± 0.15
0.65
0.3
+ 0.2
– 0.6
2.8
– 0.1
1.1
+ 0.10
0.16
– 0.06
0 – 0.1
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
MPAK
—
Conforms
0.011 g
Page 7
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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