Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4963
DESCRIPTION
·With TO-3PML package
·High breakdown voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·Color TV horizontal deflection output
·Color display horizontal deflection output
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 1700 V
CBO
V
Collector-emitter voltage Open base 800 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 8 A
PC Collector power dissipation
Tj Junction temperature 150
=25℃)
a
T
=25℃
C
50 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4963
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter sustaining voltage IC=0.1A ; IB=0 800 V
CEO(SUS)
Collector-emitter saturation voltage IC=7A ; IB=1.4A 5.0 V
CE(sat)
Base-emitter saturation voltage IC=7A ; IB=1.4A 1.5 V
BE(sat)
I
Collector cut-off current VCB=800V; IE=0 10 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 50 250 mA
EBO
h
DC current gain IC=1A ; VCE=5V 8
FE-1
h
DC current gain IC=7A ; VCE=5V 5
FE-2
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4963
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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