Page 1
Po wer Transistors
2SC4960, 2SC4960A
Silicon NPN triple diffusion planar type
For power switching
Features
■
●
High-speed switching
●
High collector to base voltage V
●
Satisfactory linearity of foward current transfer ratio h
●
Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to emitter voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
2SC4960
2SC4960A
2SC4960
2SC4960A
TC=25°C
Ta=25°C
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
=25˚C)
C
Ratings
900
900
900
800
900
7
2
1
0.3
40
3
150
–55 to +150
FE
Unit
W
˚C
˚C
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
21.0±0.516.2±0.5
3.5 0.715.0±0.2
12.5
Solder Dip
V
10.9±0.5
V
2.0±0.2
1.1±0.1
5.45±0.3
321
V
V
A
TOP–3 Full Pack Package(a)
5.0±0.2
3.2
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
A
A
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SC4960
2SC4960A
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
C
Conditions
VCB = 900V, IE = 0
VEB = 7V, IC = 0
IC = 1mA, IB = 0
IC = 1mA, IB = 0
VCE = 5V, IC = 0.05A
VCE = 5V, IC = 0.5A
IC = 0.2A, IB = 0.04A
IC = 0.2A, IB = 0.04A
VCE = 10V, IC = 0.05A, f = 1MHz
IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A,
VCC = 250V
min
800
900
6
3
typ4max
50
50
1.5
1
1
3
1
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SC4960, 2SC4960A
PC—Ta IC—V
50
)
W
(
(1)
40
C
30
20
(2)
10
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
3
V
(
BE(sat)
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.03 0.1 0.3 1
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P
=3.0W)
C
V
BE(sat)—IC
TC=–25˚C
25˚C
100˚C
Collector current IC (A
IC/IB=5
)
CE
1.2
1.0
)
A
(
0.8
C
0.6
0.4
IB=200mA
Collector current I
0.2
0
012108264
)
Collector to emitter voltage VCE (V
hFE—I
100
FE
30
TC=100˚C
10
3
1
0.3
Forward current transfer ratio h
0.1
0.01 310.10.03 0.3
Collector current IC (A
25˚C
–25˚C
TC=25˚C
100mA
90mA
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
C
VCE=5V
)
)
V
(
CE(sat)
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
1000
300
)
MHz
100
(
T
30
10
Transition frequency f
0.3
0.1
V
CE(sat)—IC
3
IC/IB=5
1
0.01 0.03 0.1 0.3 1
Collector current IC (A
fT—I
3
1
0.001
0.01 0.1 1
0.003
Collector current IC (A
TC=100˚C
25˚C
C
VCE=10V
f=1MHz
T
=25˚C
C
0.03 0.3
–25˚C
)
)
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01
01.00.80.2 0.60.4
Collector current IC (A
2
ton, t
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=5
I
C/IB
=–IB2)
(2I
B1
V
=250V
CC
=25˚C
T
C
t
stg
t
on
t
f
Area of safe operation (ASO)
10
3
I
)
A
(
CP
I
C
1
C
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
)
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
10ms
DC
2SC4960
2SC4960A
t=1ms
)
Page 3
Po wer Transistors 2SC4960, 2SC4960A
Area of safe operation, reverse bias ASO
4.0
3.5
)
3.0
A
(
C
2.5
I
CP
2.0
1.5
1.0
Collector current I
0.5
0
0
400
200
600
Collector to emitter voltage VCE (V
10000
)
1000
˚C/W
(
(t)
th
100
10
L
=100µH
coil
I
C/IB
(I
=–IB2)
B1
=25˚C
T
C
1200
800
1000
Note: Rth was measured at Ta=25˚C and under natural convection.
=10V × 0.3A (3W) and without heat sink
(1) P
T
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(2) P
T
Reverse bias ASO measuring circuit
=5
T.U.T
I
C
1400
1600
I
B1
V
in
t
W
–I
B2
)
R
—t
th(t)
(1)
(2)
L coil
V
V
CC
clamp
1
Thermal resistance R
0.1
–4
10
–3
–1
–2
10
10
Time t (s
1010
110
10
)
3
2
4
10
3
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