Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4928
DESCRIPTION
·With TO-3PL package
·High speed switching
·High breakdown voltage,high current
APPLICATIONS
·Character display horizontal deflection
output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
I
C(
surge
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
Collector surge current 20 A
)
℃)
PC Collector power dissipation TC=25℃ 150 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4928
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR )CEO
V
(BR )EBO
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE
tf
Collector-emitter breakdown voltage IC=10mA; RBE=∞ 800 V
Emitter-base breakdown voltage IE=10mA; IC=0 6 V
Collector-emitter saturatio n voltage IC=12A ;IB=3A 5.0 V
Base-emitter saturation voltage IC=12A ;IB=3A 1.5 V
Collector cut-off current VCB=1500V; RBE=0 500 μA
Emitter cut-off current VEB=6V; IC=0 500 μA
DC current gain IC=1A ; VCE=5V 38
=8A ;IB1=1.4A;IB2≈-2.5A
I
Fall time
C
=31.5kHz
f
H
0.5 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4928
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
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