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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4916
DESCRIPTION
·With TO-3P(H)IS package
·High speed ;high speed
·Low saturation voltage
·Bult-in damper diode
APPLICATIONS
·Horizontal deflection output for high
resolution display,colorTV
·High speed switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
ICM Collector current-Peak 14 A
IB Base current 3.5 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
50 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4916
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Emitter-base breakdown voltage IE=300mA ;IC=0 5 V
Collector-emitter saturation voltage IC=5A; IB=1A 5 V
Base-emitter saturation voltage IC=5A; IB=1A 1.5 V
Collector cut-off current VCB=1500V; IE=0 1 mA
Emitter cut-off current VEB=5V; IC=0 83 250 mA
DC current gain IC=1A ; VCE=5V 8 20
DC current gain IC=5A ; VCE=5V 3.8 8
Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 160 pF
VF Diode forward voltage IF=5A 1.3 1.8 V
fT Transition frequency IE=0.1A ; VCE=10V 1 3 MHz
Switching times resistive load
ts Storage time 2.0 3.0
tf Fall time
ICP=5A;IB1 =1A
IB2=-2A; RL=39Ω
0.1 0.2
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4916
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4916
4
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