Page 1
2SC4901
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Features
• High gain bandwidth product
fT = 9 GHz Typ
• High gain, low noise figure
PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
CMPAK
3
1
2
1. Emitter
2. Base
3. Collector
Page 2
2SC4901
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 0.9 1.4 pF VCB = 5 V, IE = 0,
Gain bandwidth product f
T
Power gain PG 10.0 13.0 — dB VCE = 5 V, IC = 20 mA,
Noise figure NF — 1.2 2.5 dB VCE = 5 V, IC = 5 mA,
Note: Marking is “YK–”.
15——V I
——10µAVCB = 12 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 120 250 VCE = 5 V, IC = 20 mA
6.0 9.0 — GHz VCE = 5 V, IC = 20 mA
15 V
9V
1.5 V
50 mA
100 mW
= 10 µA, IE = 0
C
= 9 V, RBE = ∞
CE
f = 1 MHz
f = 900 MHz
f = 900 MHz
2
Page 3
Maximum Collector Dissipation Curve
120
(mW)
100
C
80
200
FE
160
120
DC Current Transfer Ratio
vs. Collector Current
V = 5V
CE
2SC4901
60
40
20
Collector Power Dissipation P
0 50 100 150
Ambient Temperature Ta (°C)
Gain Bandwidth Product
vs. Collector Current
12
V = 5 V
CE
10
T
8
6
4
2
Gain Bandwidth Product f (GHz)
0
12 51020 50
Collector Current I (mA)
C
80
40
DC Current Transfer Ratio h
0
0.1
0.2 0.5 1 2 5 10 20 50
Collector Current I (mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
1.6
I = 0
E
f = 1 MHz
1.4
1.2
1.0
0.8
Collector Output Capacitance Cob (pF)
0.6
0.5
12 51020
Collector to Base Voltage V (V)
CB
3
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2SC4901
Power Gain vs. Collector Current
20
V = 5V
CE
f = 900 MHz
16
12
8
Power Gain PG (dB)
4
0
12 51020
Collector Current I (mA)
C
S21 Parameter vs. Collector Current
20
V = 5V
f = 1 GHz
16
2121
CE
50
Noise Figure vs. Collector Current
5
4
3
2
Noise Figure NF (dB)
1
0
1
2
51020
Collector Current I (mA)
V = 5V
CE
f = 900MHz
C
50
12
8
4
S Parameter |S | (dB)
0
12 51020
Collector Current I (mA)
C
50
4
Page 5
S11 Parameter vs. Frequency
1
.8
.6
.4
.2
0
.2 .4 .6 1.0
1.52
–.2
–.4
–.6
–.8
–1
Condition: V = 5 V , Zo = 50
CE
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
(I = 20 mA)
C
1.5
–1.5
2
35
4
–2
–3
Ω
2SC4901
S21 Parameter vs. Frequency
Scale: 4 / div.
120°
3
4
150°
5
10
10
180°
–10
–5
–4
–150°
–120°
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
90°
–90°
CE
(I = 5 mA)
C
(I = 20 mA)
C
60°
30°
0°
–30°
–60°
Ω
180°
–150°
S12 Parameter vs. Frequency
90°
120°
150°
–120°
–90°
Condition: V = 5 V , Zo = 50
CE
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
(I = 20 mA)
C
Scale: 0.05 / div.
60°
30°
0°
–30°
–60°
Ω
S22 Parameter vs. Frequency
1
.8
.6
.4
.2
0
.2
.6
1.0
1.5
.8
.4
–.2
–.4
–.6
–.8
–1
Condition: V = 5 V , Zo = 50
CE
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
(I = 20 mA)
C
1.5
2
–1.5
2
3
4
5
10
10
4
3
5
–10
–5
–4
–3
–2
Ω
5
Page 6
2SC4901
S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω, Emitter common)
Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
200 0.672 –69.4 10.99 134.0 0.0610 58.8 0.752 –26.7
400 0.533 –109.9 7.32 111.5 0.0841 49.9 0.528 –50.5
600 0.469 –134.7 5.28 98.8 0.0989 49.3 0.412 –56.0
800 0.446 –152.3 4.12 90.2 0.112 50.9 0.351 –59.0
1000 0.432 –165.9 3.37 83.2 0.126 53.5 0.316 –61.0
1200 0.427 –176.2 2.88 77.2 0.141 55.5 0.294 –63.3
1400 0.430 174.1 2.52 72.1 0.157 57.4 0.282 –66.0
1600 0.433 166.5 2.26 67.5 0.174 58.6 0.274 –69.1
1800 0.439 158.0 2.04 63.3 0.191 59.2 0.269 –72.0
2000 0.453 151.9 1.88 59.2 0.209 60.0 0.265 –76.0
S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω, Emitter common)
Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
200 0.421 –115.2 17.40 114.7 0.0399 50.6 0.474 –57.7
400 0.377 –150.2 9.74 98.5 0.0609 64.2 0.284 –67.2
600 0.370 –167.0 6.68 90.1 0.0822 67.8 0.213 –70.5
800 0.373 –179.1 5.09 84.0 0.105 68.6 0.180 –72.9
1000 0.371 170.6 4.13 79.0 0.128 69.2 0.161 –74.9
1200 0.377 164.9 3.49 74.3 0.151 68.9 0.151 –77.6
1400 0.384 156.9 3.04 70.3 0.174 68.3 0.146 –80.7
1600 0.388 150.7 2.71 66.8 0.197 67.3 0.143 –83.5
1800 0.392 145.3 2.45 63.3 0.219 66.2 0.142 –87.2
2000 0.406 139.0 2.25 59.5 0.241 64.9 0.141 –91.0
6
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Unit: mm
0.3
+ 0.1
– 0.05
2.0 ± 0.2
0.65
0.65
1.3 ± 0.2
0.3
0.3
+ 0.1
– 0.05
+ 0.1
– 0.05
0.2
0.9 ± 0.1
0.425
1.25 ± 0.1
0.425
2.1 ± 0.3
Hitachi Code
JEDEC
EIAJ
Weight
+ 0.1
0.16
– 0.06
0 – 0.1
(reference value)
CMPAK
—
Conforms
0.006 g
Page 8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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