Page 1
Po wer Transistors
2SC4892
Silicon NPN triple diffusion planar type
For power switching
Features
■
●
High-speed switching
●
High collector to base voltage V
●
Satisfactory linearity of foward current transfer ratio h
●
Allowing supply with the radial taping
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
TC=25°C
Ta=25°C
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
=25˚C)
C
Ratings
900
900
800
7
2
1
0.3
15
2
150
–55 to +150
FE
Unit
W
˚C
˚C
Unit: mm
5.0±0.1
1.010.0±0.2
2.5±0.2
0.65±0.1
1.05±0.10.35±0.1
0.55±0.1
1.2±0.1
90°
C1.0
2.25±0.2
0.55±0.1
4.2±0.2
13.0±0.2
18.0±0.5
Solder Dip
V
V
C1.0
123
V
V
A
A
2.5±0.2 2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
A
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
C
Conditions
VCB = 900V, IE = 0
VEB = 7V, IC = 0
IC = 1mA, IB = 0
VCE = 5V, IC = 0.05A
VCE = 5V, IC = 0.5A
IC = 0.2A, IB = 0.04A
IC = 0.2A, IB = 0.04A
VCE = 10V, IC = 0.05A, f = 1MHz
IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A,
VCC = 250V
min
800
6
3
typ4max
50
50
1.5
1
1
3
1
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SC4892
PC—Ta IC—V
20
=Ta
(1) T
)
W
(
(1)
C
15
10
5
(2)
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
)
3
V
(
BE(sat)
Base to emitter saturation voltage V
TC=–25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1
Collector current IC (A
C
(2) Without heat sink
=2.0W)
(P
C
BE(sat)—IC
100˚C
IC/IB=5
25˚C
)
CE
1.2
1.0
)
A
(
0.8
C
0.6
0.4
IB=200mA
Collector current I
0.2
0
012108264
)
Collector to emitter voltage VCE (V
hFE—I
100
FE
30
TC=100˚C
10
3
1
0.3
Forward current transfer ratio h
0.1
0.01 310.10.03 0.3
Collector current IC (A
25˚C
–25˚C
TC=25˚C
100mA
90mA
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
C
VCE=5V
)
)
V
(
CE(sat)
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
1000
300
)
MHz
100
(
T
30
10
Transition frequency f
0.3
0.1
V
CE(sat)—IC
3
IC/IB=5
1
0.01 0.03 0.1 0.3 1
Collector current IC (A
fT—I
3
1
0.001
0.01 0.1 1
0.003
Collector current IC (A
TC=100˚C
25˚C
C
VCE=10V
f=1MHz
T
C
0.03 0.3
–25˚C
)
=25˚C
)
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01
01.00.80.2 0.60.4
Collector current IC (A
2
ton, t
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=5
I
C/IB
=–IB2)
(2I
B1
V
=250V
CC
=25˚C
T
C
t
stg
t
on
t
f
Area of safe operation (ASO)
10
3
I
)
A
(
C
0.03
0.01
Collector current I
0.003
0.001
)
I
1
0.3
0.1
1 10 100 10003 30 300
Collector to emitter voltage VCE (V
CP
C
Non repetitive pulse
=25˚C
T
C
10ms
DC
t=1ms
)
Page 3
Po wer Transistors 2SC4892
R
—t
th(t)
10000
)
1000
˚C/W
(
(t)
th
100
10
1
Thermal resistance R
0.1
–4
10
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
–3
10
–1
–2
10
Time t (s
1010
110
)
(1)
(2)
3
2
10
4
10
3
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