Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4883 2SC4883A
DESCRIPTION
·With TO-220F package
·Complement to type 2SA1859/1859A
APPLICATIONS
·For audio output driver and TV
velocity-modulation applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SC4883 150
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
IB Base current 1 A
Collector-base voltage
2SC4883A
2SC4883 150
Collector-emitter voltage
2SC4883A
Emitter-base voltage Open collector 6 V
Open emitter
Open base
V
180
V
180
T
PC Collector dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
20 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4883 2SC4883A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=0.7A;IB=70mA 1.0 V
Collector cut-off
current
Emitter cut-off current VEB=6V; IC=0 10
2SC4883 150
=10mA ; IB=0
I
C
2SC4883A
180
2SC4883 VCB=150V;IE=0 10
2SC4883A V
=180V;IE=0 10
CB
V
μA
μA
μA
hFE DC current gain IC=0.7A ; VCE=10V 60 240
fT Transition frequency IC=-0.7A ; VCE=12V 120 MHz
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 30 pF
Switching time
ton Turn-on time 0.50
=1A ;IB1=-IB2=0.1A
I
ts Storage time 1.50
C
=20V ,RL=20Ω
V
CC
μs
μs
tf Fall time
2
0.50
μs
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4883 2SC4883A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4883 2SC4883A
4
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