Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4880
DESCRIPTION ·
·With TO-3PML package
·High breakdown voltage
·High speed switching
APPLICATIONS
·For color TV display horizontal deflection
output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
PC Collector power dissipation TC=25℃ 100 W
Collector-base voltage Open emitter 1700 V
Collector-emitter voltage Open base 900 V
Emitter-base voltage Open collector 5 V
=25℃)
a
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4880
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR )CEO
V
(BR )EBO
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE
Collector-emitter breakdown voltage IC=10mA; RBE=∞ 900 V
Emitter-base breakdown voltage IE=1mA; IC=0 5 V
Collector-emitter saturation voltage IC=10A; IB=2.5 A 5.0 V
Base-emitter saturation voltage IC=10A; IB=2.5 A 1.5 V
Collector cut-off current VCE=1700V;RBE=0 500 μA
Emitter cut-off current VEB=5V; IC=0 100 μA
DC current gain IC=1A ; VCE=5V 8 40
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4880
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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