Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4849
DESCRIPTION ·
·With TO-220Fa package
·Low collector saturation voltage
·High switching speed
·Wide safe operating area
APPLICATIONS
·For power supply
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 7 A
ICM Collector current-Peak 15 A
PC Collector power dissipation
Collector-base voltage Open emitter 250 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 12 V
Ta=25℃ 2
W
=25℃ 30
T
C
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4849
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-emitter sustaining voltage IC=0.1A ;IB=0 120 V
Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.6 V
Base-emitter saturation voltage IC=5A ;IB=0.5A 1.2 V
Collector cut-off current VCB=100V; IE=0 10 μA
Emitter cut-off current VEB=12V; IC=0 10 μA
DC current gain IC=3A ; VCE=5V 100 200
fT Transition frequency IC=0.5A ; VCE=10V 20 MHz
Cob Collector output capacitance f=1MHz ; VCB=10V 150 pF
Switching times
ton Turn-on time 0.5 μs
I
=5A, IB1=0.5A
C
=-0.5A; VCC≈50V
ts Storage time 2.5 μs
I
B2
RL=10Ω
tf Fall time
2
0.5 μs
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4849
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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