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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4806
DESCRIPTION
·High Breakdown Voltage : V
= 1700V(Min)
CBO
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Horizontal deflection output for high resolution display.
·High speed switching power supply output applications.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 1700 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
B Base Current-Continuous 2.5 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
50 W
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4806
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 600 V
Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A 5.0 V
Base-Emitter Saturation Voltage IC= 3.5A; IB= 1A 1.5 V
Collector Cutoff Current VCB= 1700V; IE= 0 1.0 mA
Emitter Cutoff Current VEB= 5V; IC= 0 10 μA
DC Current Gain IC= 1A; VCE= 5V 8
DC Current Gain IC= 3.5A; VCE= 5V 3.5 7.5
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz
Output Capacitance
I
= 0; VCB= 10V; f
E
= 1.0MHz
test
240 pF
Switching Times; Resistive Load
t
stg
t
f
Storage Time 3.0 μs
IC= 3.5A; IB1= 0.7A; IB2= -1.4A;
RL= 56Ω
Fall Time
0.2 μs
isc Website：www.iscsemi.cn
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