Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4804
DESCRIPTION
·With ITO-220 package
·High breakdown voltage
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
ICM Collector current-Peak 5 A
IB Base current 1 A
Collector-base voltage Open emitter 900 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 7 V
℃)
PT Total power dissipation TC=25℃ 30 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4804
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=0.8A ; VCE=5V 10
Collector-emitter breakdown voltage IC=10mA ;IB=0 600 V
Collector-base breakdown voltage IC=1mA ;IE=0 900 V
Emitter-base breakdown voltage IE=1mA ;IC=0 7 V
Collector-emitter saturation voltage IC=0.8A; IB=0.16A 0.6 V
Base-emitter saturation voltage IC=0.8A; IB=0.16A 1.2 V
Collector cut-off current VCB=800V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4804
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
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