Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4764
DESCRIPTION
·With TO-3P(H)IS package
·High speed
·High voltage
·Low saturation voltage
·Bult-in damper diode
APPLICATIONS
·Horizontal deflection output for medium
resolution display
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current
ICM Collector current-Peak
IB Base current 3 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
±6
±12
50 W
A
A
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4764
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 170 pF
VF Diode forward voltage IF=4A 1.2 1.8 V
fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz
Switching times resistive load
Emitter-base breakdown voltage IE=300mA ;IC=0 5 V
Collector-emitt er saturation voltage IC=4A; IB=0.8A 5 V
Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V
Collector cut-off current VCB=1500V; IE=0 1 mA
Emitter cut-off current VEB=5V; IC=0 83 250 mA
DC current gain IC=1A ; VCE=5V 8 12
DC current gain IC=4A ; VCE=5V 5 9
ts Storage time 1.6 2.5
tf Fall time
2
I
=4A;IB1=0.8A
CP
I
=-1.6A; RL=51Ω
B2
0.1 0.2
μs
μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4764
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4764
4
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