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固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4763
DESCRIPTION
·With TO-3P(H)IS package
·High speed ,high speed
·Low saturation voltage
·Bult-in damper diode
APPLICATIONS
·Horizontal deflection output for medium
resolution display
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current ±8 A
ICM Collector current-Peak ±16 A
IB Base current 4 A
PC Collector power dissipation TC=25℃ 50 W
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4763
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 170 pF
VF Diode forward voltage IF=6A 1.3 1.8 V
fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz
Switching times resistive load
Emitter-base breakdown voltage IE=300mA ;IC=0 5 V
Collector-emitt er saturation voltage IC=6A; IB=1.2A 5 V
Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V
Collector cut-off current VCB=1500V; IE=0 1 mA
Emitter cut-off current VEB=5V; IC=0 83 250 mA
DC current gain IC=1A ; VCE=5V 8 12
DC current gain IC=6A ; VCE=5V 5 9
ts Storage time 1.8 3.0
tf Fall time
2
I
=6A;IB1 =1.2A
CP
I
=-2.4A; RL=33Ω
B2
0.1 0.2
μs
μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4763
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4763
4
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