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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4690
DESCRIPTION
·With TO-3PML package
·Complementary to 2SA1805
·Recommend for 70W high fidelity audio
frequency amplifier output stage
APPLICATIONS
·Power amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 140 V
CBO
V
Collector-emitter voltage Open base 140 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 10 A
ICP Collector current-peak 20 A
IB Base current 1 A
PC Collector power dissipation TC=25℃ 80 W
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4690
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter breakdown voltage IC=50mA ;IB=0 140 V
(BR)CEO
I
Collector cut-off current VCB=140V; IE=0 5 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 5 μA
EBO
h
DC current gain IC=1A ; VCE=5V 55 160
FE-1
h
DC current gain IC=5A ; VCE=5V 35
FE-2
V
Collector-emitter saturation voltage IC=7A ; IB=0.7A 0.3 2.0 V
CE(sat)
VBE Base-emitter voltage IC=5A ; VCE=5V 0.9 1.5 V
fT Transition frequency IC=1A ; VCE=5V 30 MHz
Cob Collector output capacitance IE=0;VCB=10V;f=1MHz 220 pF
h
classifications
FE-1
R O
55-110 80-160
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4690
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4690
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