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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4689
DESCRIPTION
·With TO-3PML package
·Complementary to 2SA1804
·Recommend for 70W high fidelity audio
frequency amplifier output stage
APPLICATIONS
·Power amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 120 V
CBO
V
Collector-emitter voltage Open base 120 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 8 A
ICP Collector current-peak 16 A
IB Base current 0.8 A
PC Collector power dissipation TC=25℃ 70 W
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4689
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V
(BR)CEO
I
Collector cut-off current VCB=120V; IE=0 5
CBO
I
Emitter cut-off current VEB=5V; IC=0 5
EBO
h
DC current gain IC=1A ; VCE=5V 55 160
FE-1
h
DC current gain IC=4A ; VCE=5V 35 75
FE-2
V
Collector-emitter saturation voltage IC=6A ; IB=0.6A 0.35 2 V
CE(sat)
μA
μA
VBE Base-emitter voltage IC=4A ; VCE=5V 0.95 1.5 V
fT Transition frequency IC=1A ; VCE=5V 30 MHz
Cob Collector output capacitance IE=0;VCB=10V;f=1MHz 190 pF
h
classifications
FE-1
R O
55-110 80-160
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4689
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4689
4
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