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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4688
DESCRIPTION ·
·With TO-3PML package
·Complement to type 2SA1803
APPLICATIONS
·Power amplifier applications
·Recommend for 40W high fidelity audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
ICM Collector current-peak 12 A
IB Base current 0.6 A
PC Collector power dissipation
Collector-base voltage Open emitter 80 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 5 V
=25℃)
a
T
=25℃
C
55 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4688
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR )CEO
V
CE(sat)
V
I
CBO
I
EBO
h
FE-1
h
FE-2
BE
Collector-emitter breakdown voltage IC=50mA; IB=0 80 V
Collector-emitter saturation voltage IC=5A;IB=0.5 A 2.0 V
Base-emitter voltage IC=3A ; VCE=5V 1.5 V
Collector cut-off current VCB=80V; IE=0 5
Emitter cut-off current VEB=5V; IC=0 5
μA
μA
DC current gain IC=1A ; VCE=5V 55 160
DC current gain IC=3A ; VCE=5V 35
fT Transition frequency IC=1A ; VCE=5V 30 MHz
COB Output capacitance IE=0; VCB=10V;f=1MHz 105 pF
h
classifications
FE
R O
55-110 80-160
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4688
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4688
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