Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4687
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
ICM Collector current-peak 14 A
IB Base current 3 A
PC Collector power dissipation
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃
=25℃
T
C
2.5
W
60
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4687
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=10V 30 MHz
Collector-emitter breakdown voltage IC=5mA ; IB=0 400 V
Collector-base breakdown voltage IC=1mA ;IE=0 500 V
Emitter-base breakdown voltage IE=1mA ;IC=0 7 V
Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V
Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V
Collector cut-off current VCB=500V; IE=0 100 μA
Emitter cut-off current VEB=7V; IC=0 100 μA
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=3A ; VCE=5V 8
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4687
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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