Page 1
2SC460, 2SC461
Silicon NPN Epitaxial Planar
Application
• 2SC460 high frequency amplifier, mixer
• 2SC461 VHF amplifier, mixer
Outline
TO-92 (2)
1. Emitter
2. Collector
3. Base
3
2
1
Page 2
2SC460, 2SC461
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC460 2SC461 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
30 30 V
30 30 V
55V
100 100 mA
200 200 mW
2
Page 3
2SC460, 2SC461
Electrical Characteristics (Ta = 25°C)
2SC460 2SC461
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
Base to emitter voltage V
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
10.7 MHz power gain PG 26 29 ————dBVCE = 6 V, IE = –1 mA
100 MHz power gain PG — — — 13 17 — dB VCE = 6 V, IE = –1 mA
Noise figure NF — 2.0 ————dBVCE = 6 V, IE = –1 mA
Note: 1. The 2SC460 and 2SC461 are grouped by hFE as follows.
ABC
35 to 70 60 to 120 100 to 200
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
BE
V
CE(sat)
T
C
ob
30 — — 30 — — V IC = 10 µA, IE = 0
30 — — 30 — — V IC = 1 mA, RBE = ∞
5 ——5 ——V IE = 10 µA, IC = 0
— — 0.5 — — 0.5 µAVCB = 18 V, IE = 0
— — 0.5 — — 0.5 µAVEB = 2 V, IC = 0
— 0.63 0.75 — 0.63 0.75 V VCE = 12 V, IC = 2 mA
1
35 — 200 35 — 200 VCE = 12 V, IC = 2 mA
— 0.6 1.1 — 0.6 1.1 V IC = 10 mA, IB = 1 mA
— 230 — — 230 — MHz VCE = 12 V, IC = 2 mA
— 1.8 3.5 — 1.8 3.5 pF VCB = 10 V, IE = 0,
f = 1 MHz
f = 10.7 MHz
f = 100 MHz
f = 1MHz
R
= 500Ω
g
3
Page 4
2SC460, 2SC461
Small Signal y Parameters (VCE = 6 V, IC = 1 mA, Emitter Common)
2SC460A,
Item Symbol f
Input admittance yie 455 kHz 0.58 + j0.074 0.42 + j0.068 0.30 + j0.051 mS
4.5 MHz 0.65 + j0.79 0.50 + j0.7 0.35 + j0.57
10.7 MHz 0.91 + j2.0 0.61 + j1.9 0.39 + j1.3
100 MHz 7.4 + j14 5.6 + j12 3.8 + j6.0
Reverse transfer admittance yre 455 kHz –j0.003 –j0.003 –j0.003 mS
4.5 MHz –j0.04 –j0.04 –j0.04
10.7 MHz –j0.13 –j0.13 –j0.13
100 MHz –j1.0 –j1.0 –j1.0
Forward transfer admittance yfe 455 kHz 38 – j0.1 37 – j0.1 37 – j0.2 mS
4.5 MHz 35 – j1.0 35 – j1.2 34 – j1.8
10.7 MHz 34 – j2.5 34 – j2.5 33 – j4.5
100 MHz 28 – j20 28 – j19 20 – j19
Output admittance yoe 455 kHz 0.0098 + j0.009 0.013 + j0.009 0.016 + j0.012 mS
4.5 MHz 0.02 + j0.09 0.023 + j0.092 0.03 + j0.10
10.7 MHz 0.11 + j0.4 0.11 + j0.4 0.12 + j0.4
100 MHz 0.40 + j1.7 0.50 + j2.0 0.83 + j2.0
2S461A
2SC460B,
2SC461B
2SC460C,
2SC461C Unit
4
Page 5
2SC460, 2SC461
Maximum Collector Dissipation Curve
250
(mW)
C
200
150
100
50
Collector Power Dissipation P
0
50
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
10
VCE = 6 V
8
(mA)
C
6
100 150
10
100
8
Typical Output Characteristics
(mA)
C
6
4
2
Collector Current I
0
Collector to Emitter Voltage V
DC Current Transfer Ratio vs.
Collector Current
100
FE
80
60
80
60
40
20 µA
IB = 0
84
12 16 20
CE
(V)
4
2
Collector Current I
0
Base to Emitter Voltage V
0.40.2
0.6 0.8 1.0
BE
(V)
40
20
DC Current Transfer Ratio h
0
1.00.30.1
Collector Current IC (mA)
VCE = 6 V
31030
5
Page 6
2SC460, 2SC461
Noise Figure vs. Collector Current
5
V
= 6 V
CE
R
= 500 Ω
4
g
f = 1.0 MHz
3
2
Noise Figure NF (dB)
1
0
1.00.50.2
2510
Collector Current I
(mA)
C
Noise Figure vs. Signal Source Resistance
12
VCE = 6 V
I
= 1 mA
10
C
f = 100 MHz
8
6
4
Noise Figure NF (dB)
2
0
1005010 20
200 500 1000
Signal Source Resistance R
(Ω)
g
Noise Figure vs. Collector Current
24
VCE = 6 V
R
20
= 50 Ω
g
f = 100 MHz
16
12
8
Noise Figure NF (dB)
4
0
Collector Current I
Gain Bandwidth Product vs.
Collector Current
500
400
(MHz)
T
VCE = 6 V
300
200
100
Gain Bandwidth Product f
0
1.00.30.1
Collector Current IC (mA)
1.00.50.20.1
2510
(mA)
C
31030
6
Page 7
2SC460, 2SC461
Gain Bandwidth Product vs.
Collector to Emitter Voltage
400
IC = 1 mA
(MHz)
300
T
200
100
Gain Bandwidth Product f
0
Collector to Emitter Volgage VCE (V)
Input/Output Admittance vs.
Collector Current
500
VCE = 6 V
f = 455 kHz
200
= 1 mA (%)
E
100
b
oe
50
b
ie
g
ie
20
Percentage of Relative to I
10
g
oe
0.50.20.1
Collector Current I
521
10 20
g
b
21.0 5
(mA)
C
Input/Output Admittance vs.
Collector to Emitter Voltage
500
IC = 1 mA
= 6 V (%)
200
CE
b
100
50
b
oe
g
oe
ie
g
ie
f = 455 kHz
g
ie
b
g
oe
b
oe
ie
20
Percentage of Relative to V
10
521
2010 50
Collector to Emitter Voltage VCE (V)
Transfer Admittance vs.
Collector to Emitter Voltage
g
oe
ie
b
ie
oe
500
200
= 6 V (%)
CE
100
g
IC = 1 mA
f = 455 kHz
b
re
b
fe
fe
g
fe
b
fe
b
re
50
20
Percentage of Relative to V
10
521
Collector to Emitter Voltage V
2010 50
(V)
CE
7
Page 8
2SC460, 2SC461
Transfer Admittance vs.
Collector Current
500
VCE = 6 V
200
= 1 mA (%)
C
100
f = 455 kHz
b
re
50
20
g
fe
b
Percentage of Relative to I
10
fe
0.50.20.1
Collector Current I
Input/Output Admittance vs.
Collector Current
500
VCE = 6 V
f = 4.5 MHz
200
= 1 mA (%)
C
100
b
oe
50
b
ie
g
ie
g
20
oe
b
fe
(mA)
C
g
fe
b
re
21.0 5
g
oe
g
ie
b
ie
b
oe
Input/Output Admittance vs.
Collector to Emitter Voltage
500
= 6 V (%)
CE
100
g
oe
b
ie
g
ie
b
oe
200
50
20
Percentage of Relative to V
10
521
Collector to Emitter Voltage VCE (V)
Transfer Admittance vs.
Collector to Emitter Voltage
500
= 6 V (%)
200
b
CE
100
re
b
fe
g
fe
50
20
IC = 1 mA
f = 4.5 MHz
g
ie
b
ie
b
g
oe
oe
2010 50
IC = 1 mA
f = 4.5 MHz
b
re
g
fe
b
fe
Percentage of Relative to I
10
8
0.50.20.1
Collector Current I
21.0 5
(mA)
C
Percentage of Relative to V
10
521
Collector to Emitter Voltage VCE (V)
2010 50
Page 9
2SC460, 2SC461
Transfer Admittance vs.
Collector Current
500
VCE = 6 V
f = 4.5 MHz
200
= 1 mA (%)
C
100
b
re
50
20
g
fe
b
Percentage of Relative to I
10
fe
0.50.20.1
Collector Current I
Input/Output Admittance vs.
Collector Current
500
VCE = 6 V
200
= 1 mA (%)
C
100
50
20
f = 10.7 MHz
b
ie
b
oe
g
ie
g
oe
b
fe
21.0 5
(mA)
C
g
ie
b
Input/Output Admittance vs.
Collector to Emitter Voltage
500
g
fe
b
re
= 6 V (%)
200
CE
100
g
oe
b
oe
g
ie
b
ie
IC = 1 mA
f = 10.7 MHz
g
ie
b
ie
b
g
oe
oe
50
20
Percentage of Relative to V
10
521
2010 50
Collector to Emitter Voltage VCE (V)
Transfer Admittance vs.
Collector to Emitter Voltage
500
g
oe
b
oe
ie
= 6 V (%)
200
CE
100
b
re
b
fe
g
ie
IC = 1 mA
f = 10.7 MHz
b
fe
g
ie
b
re
50
20
Percentage of Relative to I
10
0.50.20.1
Collector Current IC (mA)
21.0 5
10
Percentage of Relative to V
521
Collector to Emitter Voltage VCE (V)
2010 50
9
Page 10
2SC460, 2SC461
Transfer Admittance vs.
500
Collector Current
VCE = 6 V
200
= 1 mA (%)
C
100
f = 10.7 MHz
b
re
50
20
g
fe
b
Percentage of Relative to I
10
fe
0.50.20.1
Collector Current I
Input/Output Admittance vs.
Collector Current
500
VCE = 6 V
f = 100 MHz
200
= 1 mA (%)
C
100
b
oe
b
ie
50
g
ie
21.0 5
(mA)
C
Input/Output Admittance vs.
Collector to Emitter Voltage
b
fe
g
fe
b
re
500
= 6 V (%)
200
CE
100
50
IC = 1 mA
g
oe
b
oe
g
ie
b
ie
f = 100 MHz
g
ie
b
ie
b
g
oe
oe
20
10
Percentage of Relative to V
521
2010 50
Collector to Emitter Voltage VCE (V)
Transfer Admittance vs.
Collector to Emitter Voltage
500
IC = 1 mA
g
oe
g
ie
b
ie
b
oe
200
= 6 V (%)
CE
100
b
re
g
fe
b
fe
50
f = 100 MHz
b
fe
g
fe
b
re
20
g
oe
Percentage of Relative to I
10
0.50.20.1
Collector Current IC (mA)
21.0 5
20
10
Percentage of Relative to V
521
Collector to Emitter Voltage VCE (V)
2010 50
10
Page 11
Transfer Admittance vs.
Collector Current
500
VCE = 6 V
200
= 1 mA (%)
C
100
f = 100 MHz
b
re
50
g
fe
20
b
fe
Percentage of Relative to I
10
0.50.20.1
Collector Current IC (mA)
b
fe
g
fe
b
re
21.0 5
2SC460, 2SC461
11
Page 12
Unit: mm
0.60 Max
0.45 ± 0.1
4.8 ± 0.3
1.27
2.54
0.7
5.0 ± 0.2
2.3 Max
12.7 Min
3.8 ± 0.3
0.5
Hitachi Code
JEDEC
EIAJ
(reference value)
Weight
TO-92 (2)
Conforms
Conforms
0.25 g
Page 13
Cautions
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Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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products.
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