Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4589
DESCRIPTION ·
·With TO-3PML package
·High breakdown voltage
·High speed switching
APPLICATIONS
·For color TV display horizontal deflection
output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
I
C(
surge
IB Base current 0.6 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 5 V
Collector surge current 20 A
)
=25℃)
a
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
50 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4589
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR )CEO
Collector-emitter breakdown voltage
=10mA; RBE=∞
C
800 V
V
(BR )EBO
V
CE(sat)
V
BE(sat)
I
CES
I
EBO
h
FE
tf Fall time ICP=7A; IB1=1.4A 0.2 0.5
Emitter-base breakdown voltage IE=10mA; IC=0 5 V
Collector-emitter saturation voltage IC=8A; IB=1.6 A 5.0 V
Base-emitter saturation voltage IC=8A; IB=1.6 A 1.5 V
Collector cut-off current VCE=1500V;RBE=0 500
Emitter cut-off current VEB=5V; IC=0 100
μA
μA
DC current gain IC=1A ; VCE=5V 8 38
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4589
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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