Page 1
SHINDENGEN
Switching Power Transistor
2SC4581
(TP10W45FX)
10A NPN
RATINGS
FX Series
OUTLINE DIMENSIONS
Case : ITO-3P
Unit : mm
●Absolute Maximum Ratings
Item Symbol
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
Dielectric Strength
Mounting Torque
●Electrical Characteristics (Tc=25℃)
Item Symbol
Collector to Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
Conditions
Ratings Unit
Tstg -55～150 ℃
Tj 150 ℃
V
CBO
V
CEO
V
CEX
V
EBO
I
C
I
CP
I
B
I
BP
P
Vdis
VEB = 5V
T
Tc = 25℃
Terminals to case, AC 1 minute
600 V
450 V
600
7V
10A
20
4
8
65
2
TOR 0.8
V
(sus)
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FEL
VCE(sat)
VBE(sat)
θjc
f
T
ton
ts
tf
IC = 0.2A
At rated Voltage
At rated Voltage
V
= 5V, IC = 5A
CE
V
= 5V, IC = 1mA
CE
IC = 5A
IB = 1A
Junction to case
V
= 10V, IC = 1A
CE
IC = 5A
IB1 = 1A, IB2 = 2A
RL = 30Ω, V
BB2
Conditions
= 4V
Ratings Unit
Min 450 V
Max 0.1 mA
Max 0.1
Max 0.1 mA
Min 10
Min 5
Max 1.0 V
Max 1.5 V
Max 1.92 ℃/W
STD 20 MHz
Max 0.5
Max 2.0 μs
Max 0.2
A
W
kV
N･m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Page 2
C
- I
FE
h
= 5V
CE
V
20
[A]
C
2SC4581
100
Tc = 150°C
100°C
FE
50°C
25°C
0°C
10
−25°C
−55°C
1
DC Current Gain h
Collector Current I
0.001 0.01 0.1 1 10
Page 3
BE
[V]
Base-Emitter Voltage V
3
2.5
Saturation Voltage
2
1.5
15A
10A
1
8A
5A
0.5
0
8
[A]
B
3A 5A 8A 10A 15A
2SC4581
= 1A
C
I
3
2.5
CE
[V]
3A
Base Current I
= 1A
C
I
Tc = 25°C
0.01 0.1 1
2
1.5
1
0.5
0
Collector-Emitter Voltage V
Page 4
2SC4581
1
Switching Time - I
t
s
C
[µs]
SW
0.1
Switching Time t
t
on
t
f
IB1 = 0.2I
IB2 = 0.4I
V
BB2
VCC = 150V
Tc = 25°C
C
C
= 4V
0.01
0 2 4 6 8 10
Collector Current IC [A]
Page 5
[µs]
SW
2SC4581
1
Switching Time - V
t
s
t
on
CC
0.1
Switching Time t
0.01
0 50 100 150 200 250 300
t
f
IC = 5A
IB1 = 1A
IB2 = 2A
V
Tc = 25°C
Collector Voltage VCC [V]
BB2
= 4V
Page 6
[µs]
SW
2SC4581
1
Switching Time - Tc
t
s
t
on
0.1
Switching Time t
0.01
0 50 100 150
t
f
IC = 5A
IB1 = 1A
IB2 = 2A
V
R
Case Temperature Tc [°C]
= 4V
BB2
= 30Ω
L
Page 7
2
10
1
10
0
10
-1
10
Transient Thermal Impedance
2SC4581
10
1
0.1
-2
Time t [s]
10
-3
10
-4
10
-5
10
0.01
Transient Thermal Impedance θjc(t) [°C/W]
Page 8
20
2SC4581
10ms
Forward Bias SOA
1ms
150µs
50µs
10
[A]
1
C
Collector Current I
DC
PT limit
I
S/B
limit
0.1
Tc = 25°C
Single Pulse
0.01
1 10 100
Collector-Emitter Voltage VCE [V]
450
Page 9
100
80
60
2SC4581 Collector Current Derating
I
limit
S/B
40
Collector Current Derating [%]
20
VCE = fixed
0
0 50 100 150
PT limit
Case Temperature Tc [°C]
Page 10
20
15
[A]
C
10
2SC4581
Reverse Bias SOA
Collector Current I
5
IB1 = 0.3I
IB2 = 3.0A
V
BB2
Tc < 150°C
0
0 100 200 300 400 500 600
C
= 5V
Collector-Emitter Voltage VCE [V]
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