Page 1
SHINDENGEN
Switching Power Transistor
2SC4580
(TP8W45FX)
8A NPN
RATINGS
FX Series
OUTLINE DIMENSIONS
Case : ITO-3P
Unit : mm
●Absolute Maximum Ratings
Item Symbol
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
Dielectric Strength
Mounting Torque
●Electrical Characteristics (Tc=25℃)
Item Symbol
Collector to Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
Conditions
Ratings Unit
Tstg -55～150 ℃
Tj 150 ℃
V
CBO
V
CEO
V
CEX
V
EBO
I
C
I
CP
I
B
I
BP
P
Vdis
VEB = 5V
T
Tc = 25℃
Terminals to case, AC 1 minute
600 V
450 V
600
7V
8A
16
4
8
50
2
TOR 0.8
V
(sus)
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FEL
VCE(sat)
VBE(sat)
θjc
f
T
ton
ts
tf
Conditions
IC = 0.2A
At rated Voltage
At rated Voltage
V
= 5V, IC = 4A
CE
V
= 5V, IC = 1mA
CE
IC = 4A
IB = 0.8A
Junction to case
V
= 10V, IC = 0.8A
CE
IC = 4A
IB1 = 0.8A, IB2 = 1.6A
RL = 37.5Ω, V
BB2
= 4V
Ratings Unit
Min 450 V
Max 0.1 mA
Max 0.1
Max 0.1 mA
Min 10
Min 5
Max 1.0 V
Max 1.5 V
Max 2.5 ℃/W
STD 20 MHz
Max 0.5
Max 2.0 μs
Max 0.2
A
W
kV
N･m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Page 2
C
- I
FE
h
= 5V
CE
V
16
[A]
C
2SC4580
100
Tc = 150°C
FE
100°C
50°C
25°C
0°C
10
−25°C
−55°C
DC Current Gain h
Collector Current I
1
0.001 0.01 0.1 1 10
Page 3
BE
[V]
Base-Emitter Voltage V
3
2.5
Saturation Voltage
2
1.5
16A
1
8A
4A
0.5
0
8
[A]
B
2SC4580
= 1A 2A 4A 8A 16A
C
I
3
2.5
CE
[V]
2A
= 1A
C
I
Tc = 25°C
0.01 0.1 1
2
1.5
1
0.5
0
Base Current I
Collector-Emitter Voltage V
Page 4
2SC4580
1
Switching Time - I
t
s
C
[µs]
SW
0.1
Switching Time t
t
on
t
f
IB1 = 0.2I
IB2 = 0.4I
V
BB2
VCC = 150V
Tc = 25°C
C
C
= 4V
0.01
0 1 2 3 4 5 6 7 8
Collector Current IC [A]
Page 5
[µs]
SW
2SC4580
1
Switching Time - V
t
s
t
on
CC
0.1
Switching Time t
0.01
0 50 100 150 200 250 300
t
f
Collector Voltage VCC [V]
IC = 4A
IB1 = 0.8A
IB2 = 1.6A
V
= 4V
BB2
Tc = 25°C
Page 6
[µs]
SW
2SC4580
1
Switching Time - Tc
t
s
t
on
0.1
Switching Time t
0.01
0 50 100 150
t
f
IC = 4A
IB1 = 0.8A
IB2 = 1.6A
V
R
Case Temperature Tc [°C]
= 4V
BB2
= 37.5Ω
L
Page 7
2
10
1
10
0
10
-1
10
Transient Thermal Impedance
2SC4580
10
1
0.1
-2
Time t [s]
10
-3
10
-4
10
-5
10
0.01
Transient Thermal Impedance θjc(t) [°C/W]
Page 8
16
10
[A]
C
2SC4580
1ms10ms
DC
PT limit
1
Forward Bias SOA
150µs
I
limit
S/B
50µs
Collector Current I
0.1
Tc = 25°C
Single Pulse
0.01
1 10 100
Collector-Emitter Voltage VCE [V]
450
Page 9
100
80
60
2SC4580 Collector Current Derating
I
limit
S/B
40
Collector Current Derating [%]
20
VCE = fixed
0
0 50 100 150
PT limit
Case Temperature Tc [°C]
Page 10
16
14
12
10
[A]
C
2SC4580
8
Reverse Bias SOA
6
Collector Current I
4
IB1 = 0.3I
2
0
IB2 = 2.4A
V
BB2
Tc < 150°C
0 100 200 300 400 500 600
C
= 5V
Collector-Emitter Voltage VCE [V]
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