Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4531
DESCRIPTION
·With TO-3P(H)IS package
·High voltage,high speed
·Low saturation voltage
·Bult-in damper diode
APPLICATIONS
·Horizontal deflection output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-Peak 20 A
IB Base current 5 A
PC Total power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
50 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4531
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 210 pF
VF Diode forward voltage IF=7A 1.5 1.8 V
fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz
Switching times resistive load
ts Storage time 1.8 2.5 μs
tf Fall time
Emitter-base breakdown voltage IE=200mA ;IC=0 5 V
Collector-emitter saturation voltage IC=7A; IB=1.7A 5 V
Base-emitter saturation voltage IC=7A; IB=1.7A 1.5 V
Collector cut-off current VCB=500V; IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 66 100 200 mA
DC current gain IC=1A ; VCE=5V 8
I
=7A;IB1 =1.4A
CP
=-2.8A; RL=28.5Ω
I
B2
0.1 0.2 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4531
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4531
4
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