Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4517 2SC4517A
DESCRIPTION
·With TO-220F package
·High voltage switching transistor
APPLICATIONS
·For switching regulator and
general purpose applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SC4517 900
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
ICM Collector current-pulse 6 A
IB Base current 1.5 A
Collector-base voltage
2SC4517A
Collector-emitter voltage Open base 550 V
Emitter-base voltage Open collector 7 V
Open emitter
V
1000
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
30 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4517 2SC4517A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=1A ; VCE=4V 10 30
COB Output capacitance IE=0; VCB=10V;f=1MHz 35 pF
fT Transition frequency IE=-0.25A ; VCE=12V 6 MHz
Switching times
ton Turn-on time 0.7 μs
ts Storage time 4.0 μs
Collector-emitter breakdown voltage IC=10mA ; IB=0 550 V
Collector-emitter saturation voltage IC=1A; IB=0.2A 0.5 V
Base-emitter saturation voltage IC=1A; IB=0.2A 1.2 V
Collector cut-off current VCB=800V; IE=0 100 μA
Emitter cut-off current VEB=7V; IC=0 100 μA
=1.0A IB1=0.15A
I
C
I
=-0.45A
B2
VCC=250V ,RL=250Ω
tf Fall time
2
0.5 μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4517 2SC4517A
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4517 2SC4517A
4
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