Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4509
DESCRIPTION
·With TO-3PML package
·High voltage ,high speed switching
·Low collector saturation voltage
APPLICATIONS
·Switching regulators
·DC-DC convertors
·Solid state relay
·General purpose power amplifiers
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
IB Base current 3 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 10 V
℃)
T
=25℃
C
80 W
℃
T
Storage temperature -55~150
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction case 1.56
th j-C
℃
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4509
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=1A ; VCE=5V 25 65
Switching times
ton Turn-on time 1.0 μs
t
stg
Collector-base breakdown voltage IC=1mA; IE=0 500 V
Collector-emitter sustaining voltage IC=0.2A; IB=0 400 V
Emitter-base breakdown voltage IE=1mA; IC=0 10 V
Collector-emitt er saturation voltage IC=4A; IB=0.8A 0.8 V
Base-emitter saturation voltage IC=4A; IB=0.8A 1.2 V
Collector cut-off current VCB=450V; IE=0 100 μA
Emitter cut-off current VEB=10V; IC=0 100 μA
=5A;RL=30Ω
I
C
=0.5A; IB2=-1A
Storage time 2.5 μs
I
B1
Pw = 20μs; Duty≤2%
tf Fall time
2
0.5 μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4509
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4509
4
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