Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4508
DESCRIPTION
·With TO-220F package
·High breakdown voltage
·High speed switching performance
APPLICATIONS
·For switching regulator and general
purpose power amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
PC Collector dissipation
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
T
=25℃
C
40 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4508
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustainig voltage IC=100mA ; IB=0 400 V
Collector-base breakdown voltage IC=1mA ; IE=0 500 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage IC=4A ;IB=0.8A 0.8 V
Base-emitter saturation voltage IC=4A ;IB=0.8A 1.2 V
Collector cut-off current VCB=450V; IE=0 100 μA
Emitter cut-off current VEB=7V; IC=0 100 μA
DC current gain IC=1A ; VCE=5V 25 65
DC current gain IC=4A ; VCE=5V 20
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4508
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
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