Page 1
2SC4500(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency amplifier
Outline
4
1
2
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
1
2, 4
3
Page 2
2SC4500(L)/(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
60 V
Collector to emitter voltage V
CEO
60 V
Emitter to base voltage V
EBO
7V
Collector current I
C
1A
Collector peak current I
C (peak)
2A
Collector power dissipation P
C
0.8 W
PC*
1
8
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
60 — — V IC = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7——VI
E
= 0.1 mA, IC = 0
Collector cutoff current I
CBO
——10µAV
CB
= 60 V, IE = 0
DC current transfer ratio h
FE
2000 — — VCE = 10 V, IC = 500 mA*
1
Collector to emitter saturation
voltage
V
CE (sat)
— — 1.5 V IC = 500 mA, IB = 0.5 mA*
1
Base to emitter saturation
voltage
V
BE (sat)
— — 2.0 V IC = 500 mA, IB = 0.5 mA*
1
Turn on time t
on
— 100 — ns VCC = 12 V, IC = 250 mA,
Turn off time t
off
— 600 — ns IB1 = –IB2 = 5 mA
Note: 1. Pulse Test.
Page 3
2SC4500(L)/(S)
3
Maximum Collector Dissipation Curve
12
8
4
0 50 100 150
Case temperature T
C
(°C)
Collector power dissipation P
C
(W)
3.0
1.0
0.3
0.1
0.03
Collector current I
C
(A)
1.0 3 3010 100
Collector to emitter voltage V
CE
(V)
DC Operation(T
C
= 25°C)
PW = 10 ms
1 ms
Area of Safe Operation
100 µs
Ta = 25°C, 1 Shot Pulse
Typical Output Characteristics
IB = 0, Ta = 25°C
80 µA
100
120
120
140
160
200
180
1.0
0.8
0.6
0.4
0.2
012
Collector to emitter voltage V
CE
(V)
543
Collector current I
C
(A)
100,000
30,000
10,000
3,000
1,000
0.01 0.1 1.00.03 0.3
DC current transfer ratio h
FE
Collector current IC (A)
DC Current Transfer Ratio vs.
Collector Current
VCE = 10 V
Ta = 25°C
Page 4
2SC4500(L)/(S)
4
Saturation Voltage vs. Collector Current
10
3
1.0
0.3
0.1
0.01 0.30.03 0.1 1.0
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter saturation voltage V
BE(sat)
(V)
V
BE(sat)
V
CE(sat)
IC = 1000 I
B
Ta = 25°C
Page 5
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
DPAK (L)-(1)
—
Conforms
0.42 g
Unit: mm
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
3.1 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
Page 6
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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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