Datasheet 2SC4463 Datasheet (HIT)

Application

UHF frequency converter

Outline

CMPAK

2SC4463

Silicon NPN Epitaxial

3

1

2

1. Emitter

2. Base

3. Collector

2SC4463

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector to emitter breakdown

V

(BR)CEO

voltage
Emitter to base breakdown

V

(BR)EBO

voltage
Collector cutoff current I
Collector to emitter saturation

V

CBO

CE(sat)

voltage
DC current transfer ratio h
Gain bandwidth product f

FE

T

Reverse transfer capacitance Cre — 0.35 0.65 pF VCB = 10 V, IE = 0,

Conversion gain CG — 21 — dB VCC = 12 V, IC = 2 mA,

Noise figure NF — 4.0 — dB f

Note: Marking is “HC”.

30——V I

20——V I

3 ——V I

— — 0.5 µAVCB = 10 V, IE = 0
— — 1.0 V IC = 20 mA, IB = 4 mA

60 120 — VCE = 10 V, IC = 10 mA
600 1000 — MHz VCE = 10 V, IC = 10 mA

30 V
20 V
3V
50 mA
100 mW

= 10 µA, IE = 0

C

= 1 mA, RBE = ∞

C

= 10 µA, IC = 0

E

emitter common,
f = 1 MHz

f = 200 MHz

= 230 Mhz (0 dBm),

OSC

f

= 30 MHz

out

2

Maximum Collector Dissipation Curve

150

FE

2SC4463

DC Current Transfer Ratio vs.

Collector Current

200

VCE = 10 V

160

100

50

Collector Power Dissipation Pc (mW)

0 50 100 150

Ambient Temperature Ta (°C)

Gain Bandwidth Product vs.

Collector Current

2,000

VCE = 10 V

1,600

(MHz)

T

1,200

800

400

Gain Bandwidth Product f

0

12 51020 50

Collector Current I

(mA)

C

120

80

40

DC Current Transfer Ratio h

0

12 51020 50

Collector Current I

(mA)

C

Reverse Transfer Capacitance vs.

Collector to Base Voltage

5.0

(pF)

re

2.0

IE = 0
f = 1 MHz
Emitter Common

1.0

0.5

0.2

Reverse Transfer Capacitance C

0.1
12 51020 50

Collector to Base Voltage VCB (V)

3

2SC4463

Conversion Gain vs. Collector Current

25

20

15

VCC = 12 V
f = 200 MHz
f

= 230 MHz

5

osc

(0 dBm)
f

= 30 MHz

out

R

= 50 Ω

g

10

Conversion Gain CG (dB)

0 246810

Collector Current IC (mA)

Conversion Gain, noise figure vs.

Oscillating Injection Voltage

25

20

15

Noise Figure vs. Collector Current

10

8

6

4

Noise Figure NF (dB)

2

VCC = 12 V
f = 200 MHz
f

= 230 MHz

osc

(0 dBm)
f

= 30 MHz

out

R

= 50 Ω

g

0 12345

Collector Current IC (mA)

10

CG

8

6

VCC = 12 V

10

I

= 2 mA

C

f = 200 MHz
f

= 230 MHz

osc

5

Conversion Gain CG (dB)

f

= 30 MHz

out

R

= 50 Ω

g

0

–6–8 –4 –2 0 2

Oscillating Injection Voltage V

NF

OSC

(dBm)

4

Noise Figure NF (dB)

2

0

4

Conversion Gain, Noise Figure Test Circuit

f

= 230 MHz

osc

(0 dBm)

1.5 p

2200 p

2SC4463

V

CC

L

4

18 p 80 p

f =
200 MHz

56 p

L

2

Ferrite Bead

D.U.T.

L

4.2 p 330 2200 p

1

L

3

2200 p

V

BB

L1 : φ0.5 mm Enameled Copper Wire 4 Turns Inside Dia φ5 mm
L

: φ0.5 mm Enameled Copper Wire 4 Turns Inside Dia φ4 mm

2

: φ0.2 mm Enameled Copper Wire 6 Turns Inside Dia φ3 mm

L

3

L

: φ0.2 mm Enameled Copper Wire 16 Turns, Inside Dia φ0.5 mm, Using Ferrite Bead

4

560

27 p

f

= 230 MHz

out

R

= 50 Ω

L

Unit R : Ω
C : F

5

Unit: mm

0.3

+ 0.1
– 0.05

2.0 ± 0.2

0.65

0.65

1.3 ± 0.2

0.3

0.3

+ 0.1
– 0.05

+ 0.1
– 0.05

0.2

0.9 ± 0.1

0.425

1.25 ± 0.1

0.425

2.1 ± 0.3

Hitachi Code
JEDEC
EIAJ
Weight

+ 0.1

0.16

– 0.06

0 – 0.1

(reference value)

CMPAK
—
Conforms

0.006 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX