Datasheet 2SC4462 Datasheet (HIT)

Application

UHF frequency converter

Outline

CMPAK

2SC4462

Silicon NPN Epitaxial

3

1

2

1. Emitter

2. Base

3. Collector

2SC4462

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector to emitter breakdown

V

(BR)CEO

voltage
Emitter to base breakdown

V

(BR)EBO

voltage
Collector cutoff current I
Collector to emitter saturation

V

CBO

CE(sat)

voltage
DC current transfer ratio h
Gain bandwidth product f

FE

T

Collector output capacitance Cob — — 0.8 pF VCB = 10 V, IC = 5 mA,

Conversion gain CG — 7.0 — dB VCC = 12 V, IE = 0,

Noise figure NF — 10.0 — dB f

Note: Marking is “EC”.

30——V I

25——V I

4 ——V I

— — 0.5 µAVCB = 10 V, IE = 0
——5VI

30 — — VCE = 10 V, IC = 3 mA
700 1000 — MHz VCE = 10 V, IC = 5 mA

30 V
25 V
4V
20 mA
100 mW

= 10 µA, IE = 0

C

= 1 mA, RBE = ∞

C

= 10 µA, IC = 0

E

= 10 mA, IB = 1 mA

C

f = 1 MHz

f = 900 MHz

= 930 Mhz (0 dBm),

OSC

f

= 30 MHz

out

2

Maximum Collector Dissipation Curve

150

2SC4462

DC Current Transfer Ratio

vs. Collector Current

100

(mW)

C

100

50

Collector Power Dissipation P

0

50

Ambient Temperature Ta (°C)

Gain Bandwidth Product

vs. Collector Current

2000

1600

(MHz)

T

1200

800

100 150

VCE = 10 V

FE

80

60

40

20

DC Current Transfer Ratio h

0

521

Collector Current I

Collector Output Capacitance

vs. Collector to Base Voltage

1.0

(pF)

ob

0.8

0.6

0.4

VCE = 10 V

10 20 50

(mA)

C

f = 1 MHz
I

= 0

E

400

Gain Bandwidth Product f

0

521

Collector Current I

10 20 50

(mA)

C

0.2

Collector Output Capacitance C

0

10 20 50

521

Collector to Base Voltage V

CB

(V)

3

2SC4462

Reverse Transfer Capacitance
vs. Collector to Emitter Voltage

0.5

(pF)

rb

0.4

f = 1 MHz
Base Common

0.3

0.2

0.1

Reverse Transfer Capacitance C

0

521

10 20 50

Collector to Emitter Voltage V

(V)

CE

Noise Figure vs. Collector Current

20

16

12

Conversion Gain vs. Collector Current

10

VCC = 12 V
f = 900 MHz

8

6

f

osc

(0 dBm)
f

out

4

2

Conversion Gain CG (dB)

0

12

345

Collector Current I

= 930 MHz

= 30 MHz

(mA)

C

8

Noise Figure NF (dB)

4

0

0.4 0.8
Collector Current I

VCC = 12 V
f = 900 MHz
f

= 930 MHz

osc

(0 dBm)
f

= 30 MHz

out

1.2 1.6 2.0
(mA)

C

4

Conversion Gain and Noise Figure Test Circuit

C

2

f

= 930 MHz

osc

(0 dBm)

L

4

L

3

L

1

L

2

8 p*

L

6

D.U.T.

12 p

2SC4462

1 k

C

3

200 µ

L

5

80 p

f

= 30 MHz

out

R

= 50 Ω

L

C

1

L

: φ1 mm Enameled Copper Wire

1

f = 900 MHz

L2 : φ1 mm Enameled Copper Wire

L3 : φ1 mm Enameled Copper Wire

L4 : φ1 mm Enameled Copper Wire

L5 : Bobbin φ5 mm inside dia, φ0.2 mm
Enameled Copper Wire 20 Turns
L

: φ0.5 mm Enameled Copper Wire 1 Turn

6

inside dia φ6 mm
C1 : 20 pF max. Air Trimmer Condenser
C

, C3 : 1000 pF Air Core Capacitor

2

100

0.047 µ

7

90°

90°

13

77

90°

(Dimensions in mm)

23

20

22

90°

90°

90°

130°

120°

11

Disk Capacitor

*

R : Ω

11

Unit

C : F
L : H

4

13

3

5

Unit: mm

0.3

+ 0.1
– 0.05

2.0 ± 0.2

0.65

0.65

1.3 ± 0.2

0.3

0.3

+ 0.1
– 0.05

+ 0.1
– 0.05

0.2

0.9 ± 0.1

0.425

1.25 ± 0.1

0.425

2.1 ± 0.3

Hitachi Code
JEDEC
EIAJ
Weight

+ 0.1

0.16

– 0.06

0 – 0.1

(reference value)

CMPAK
—
Conforms

0.006 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX