Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4448
DESCRIPTION
·With TO-220F package
·High voltage ,high frequency
APPLICATIONS
·Chroma output applications for HDTV
·Video output applications for high-
resolution display
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 150 mA
ICM Collector current-peak 300 mA
IB Base current 50 mA
PC Collector dissipation
Collector-base voltage Open emitter 250 V
Collector-emitter voltage Open base 250 V
Emitter-base voltage Open collector 5 V
℃)
Ta=25℃ 2
W
TC=25℃ 10
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4448
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=50mA ;IB=5mA 1.0 V
CEsat
V
Base-emitter saturation voltage IC=50mA ;IB=5mA 1.0 V
BEsat
I
Collector cut-off current VCB=200V; IE=0 100 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 10 μA
EBO
h
DC current gain IC=10mA ; VCE=10V 40 200
FE-1
h
DC current gain IC=100mA ; VCE=10V 20
FE-2
fT Transition frequency IC=40mA ; VCE=10V 240 MHz
COB Collector output capacitance f=1MHz;VCB=30V 3.3 pF
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4448
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4448
4
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