Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4442
DESCRIPTION
·Collector-Base Breakdown Voltage : V
(BR)CBO
·Wide Area of Safe Operation
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (T
·
= 500V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
V
I
CBO
CES
CEO
EBO
I
C
CM
I
B
P
C
Collector-Base Voltage 500 V
Collector-Emitter Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 4 A
Collector Current-Peak 8 A
B Base Current-Continuous 1.6 A
Collector Power Dissipation
@Ta=25℃
Collector Power Dissipation
@TC=25℃
2
W
45
T
T
stg
Junction Temperature 150 ℃
j
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4442
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching Times
t
on
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V
)
sat
Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V
)
sat
Collector Cutoff Current VCB= 500V; IE= 0 100 μA
Emitter Cutoff Current VEB= 5V; IC= 0 100 μA
DC Current Gain IC= 0.1A; VCE= 5V 10
DC Current Gain IC= 2A; VCE= 5V 6
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 1MHz 5 MHz
Turn-on Time 0.5 μs
t
s
t
f
Storage Time 2.0 μs
Fall Time
isc Website：www.iscsemi.cn
= 2A; IB1= 0.4A; IB2= -0.8A;
I
C
= 150V
V
CC
0.1 μs
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