Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4438
DESCRIPTION
·High Breakdown Voltage : V
(BR)CBO
·High Switching Speed
·High Reliability
APPLICATIONS
·Ultrahigh-definition color display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(T
= 1500V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CP
C
T
J
stg
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 6 A
Collector Current-Peak 16 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
50 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4438
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(
V
BE(
I
CBO
I
CES
I
EBO
h
FE-1
h
FE-2
Switching times
t
stg
t
f
Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 800 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 5.0 V
)
sat
Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 1.5 V
)
sat
Collector Cutoff Current VCB= 800V; IE= 0 10 μA
Collector Cutoff Current VCE= 1500V; RBE= 0 1.0 mA
Emitter Cutoff Current VEB= 4V; IC= 0 1.0 mA
DC current gain IC= 1A; VCE= 5V 8
DC current gain IC= 5A; VCE= 5V 4 6
Storage Time 3.0 μs
Fall Time
= 5A , IB1= 1A; IB2= -2A;
I
C
= 200V
V
CC
0.3 μs
isc Website：www.iscsemi.cn
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