Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4426
DESCRIPTION
·High Breakdown Voltage : V
(BR)CEO
·Fast Switching speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25
= 800V(Min)
℃)
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
I
B
C
T
J
Collector-Base Voltage 1100 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 3 A
Collector Current-Pulse 10 A
B Base Current-Continuous 1.5 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
Junction Temperature 150 ℃
45
W
3
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4426
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 800 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1100 V
Emitter-Base Breakdown Voltage IE= 1mA; IC=0 7 V
Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 2.0 V
)
sat
Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V
)
sat
Collector Cutoff Current VCB= 800V; IE= 0 10 μA
Emitter Cutoff Current VEB= 5V; IC= 0 10 μA
DC Current Gain IC= 0.2A; VCE= 5V 10 40
DC Current Gain IC= 1A; VCE= 5V 8
Output Capacitance
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 15 MHz
I
= 0; VCB= 10V; f
E
=1.0MHz
test
60 pF
Switching times
t
on
t
stg
t
f
Turn-on Time 0.5 μs
= 2A; IB1= 0.4A; IB2= -0.8A;
I
Storage Time 3.0 μs
Fall Time
C
= 200Ω; VCC= 400V
R
L
0.3 μs
h
Classifications
FE-1
K L M
10-20 15-30 20-40
isc Website：www.iscsemi.cn
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