Datasheet 2SC4422 Datasheet (HIT)

Application

VHF / UHF wide band amplifier

Outline

UPAK

3

2SC4422

Silicon NPN Epitaxial

1

2

4

1. Base

2. Collector

3. Emitter

4. Collector (Flange)

2SC4422

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector cutoff current I

Emitter cutoff current I
DC current transfer ratio h

CBO

I

CEO

EBO

FE

Collector output capacitance Cob — 1.2 1.6 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f

T

Power gain PG 7.0 9.0 — dB VCE = 5 V, IC = 20 mA,

Noise figure NF — 1.6 3.0 dB VCE = 5 V, IC = 5 mA,

Note: Marking is “CR”.

15——V I

——1 µAVCB = 12 V, IE = 0
——1 µAVCE = 10 V, RBE = ∞
——1 µAVEB = 1 V, IC = 0
50 — 250 VCE = 5 V, IC = 20 mA

4.5 6.0 — GHz VCE = 5 V, IC = 20 mA

15 V
11 V
2V
50 mA
400 mW

= 10 µA, IE = 0

C

f = 900 MHz

f = 900 MHz

2

2SC4422

Maximum Collector Dissipation Curve

600

(mW)

C

400

200

Collector Power Dissipation P

0

50 100 150

Ambient Temperature Ta (°C)

DC Current Transfer Ratio vs.

Collector Current

200

FE

160

120

20

Typical Output Characteristic

150

16

(mA)

C

12

125

100

75

8

50

4

Collector Current I

= 25 µA

I

B

024 1086

Collector to Emitter Voltage V

CE

(V)

Gain Bandwidth Product vs.

Collector Current

10

V

= 5 V

CE

8

(GHz)

T

V

= 5 V

CE

6

80

40

DC Current Transfer Ratio h

0

12 10

Collector Current I

(mA)

C

50520

4

2

Gain Bandwidth Product f

0

12 10

Collector Current I

(mA)

C

50520

3

2SC4422

Collector Output Capacitance vs.

Collector to Base Voltage

2.0

(pF)

ob

1.6

1.2

0.8

0.4

Collector Output Capacitance C

0

1 2 10 50520

Collector to Base Voltage VCB (V)

IE = 0
f = 1 MHz

5

4

3

Power Gain vs. Collector Current

20

16

12

8

Power Gain PG (dB)

4

0

1 2 10 50520

Noise Figure vs. Collector Current

VCE = 5 V
f = 900 MHz

Collector Current I

VCE = 0
f = 900 MHz

(mA)

C

2

Noise Figure NF (dB)

1

0

1 2 10 50520

Collector Current IC (mA)

4

S Parameters (Emitter Common)

Test Condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz Step), ZO = 50 Ω

IC = 5 mA
I

= 10 mA

C

S11-Frequency

1

0.2

0

–0.2

0.8

0.6

0.4

0.2 0.4 0.6 1 1.52 3 5 104

–0.4

–0.6

–0.8

–1

1.5
2

3

4

5

10

∞

–10

–5

–4

–3

–2

–1.5

2SC4422

–180°

150°

–150°

120°

–120°

S21-Frequency

90°

–90°

Scale : 10/div

60°

30°

0°

–30°

–60°

5

2SC4422

120°

S12-Frequency

90°

Scale : 0.1/div

60°

–180°

0.2

0

150°

–150°

0.4

0.2 0.4 0.6

–120°

0.6

–90°

S22-Frequency

1

0.8

0.8

1 1.52 3 5 104

30°

0°

–30°

–60°

1.5
2

3

4

5

10

∞

–10

–0.2

–0.4

–0.6

–0.8

–1

–2

–1.5

–5

–4

–3

6

2SC4422

S Parameters (Emitter Common)

Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Ω

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

100 0.747 –42.0 12.471 143.1 0.044 69.5 0.840 –24.6
200 0.534 –70.3 8.958 119.9 0.071 62.3 0.640 –36.3
300 0.394 –91.0 6.624 106.1 0.090 61.2 0.522 –40.4
400 0.310 –105.3 5.194 96.8 0.108 62.5 0.456 –42.4
500 0.258 –117.0 4.280 89.7 0.126 64.1 0.417 –43.7
600 0.216 –126.9 3.636 84.0 0.145 65.1 0.391 –45.4
700 0.193 –139.0 3.170 79.0 0.165 65.9 0.376 –47.5
800 0.167 –149.6 2.824 74.5 0.185 66.5 0.368 –50.0
900 0.157 –162.3 2.543 70.2 0.206 66.9 0.363 –53.1
1000 0.136 –171.9 2.326 66.6 0.227 67.0 0.362 –56.3

Test Condition VCE = 5 V, IC = 20 mA, ZO = 50 Ω

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

100 0.333 –71.6 21.905 117.7 0.031 71.9 0.547 –37.3
200 0.192 –98.5 12.026 100.7 0.054 74.6 0.378 –37.6
300 0.135 –116.1 8.123 92.4 0.079 75.8 0.322 –35.5
400 0.107 –130.9 6.151 86.7 0.104 76.2 0.297 –35.7
500 0.088 –145.2 4.967 82.3 0.129 75.5 0.285 –36.6
600 0.078 –155.4 4.174 78.2 0.153 74.8 0.275 –38.8
700 0.069 –170.6 3.616 74.7 0.178 73.8 0.271 –42.0
800 0.060 176.2 3.201 71.1 0.203 72.8 0.268 –45.3
900 0.063 162.6 2.876 67.9 0.227 71.7 0.268 –49.3
1000 0.051 147.4 2.624 65.0 0.251 70.5 0.271 –53.5

7

2SC4422

Y Parameters (Emitter Common)

Test Condition VCE = 5 V, IC = 5 mA

Freq. Yie (mS) Yfe (mS) Yre (mS) Yoe (mS)
(MHz) REAL IMAG. REAL IMAG. REAL IMAG. REAL IMAG.

100 1.949 3.563 147.837 –43.785 –0.001 –0.544 0.175 0.922
200 3.994 5.961 120.026 –75.352 0.005 –1.122 0.218 1.731
300 6.433 7.295 89.506 –98.131 0.006 –1.711 0.206 2.618
400 8.206 7.536 62.937 –90.892 0.017 –2.299 0.250 3.531
500 9.403 7.501 43.528 –87.146 0.043 –2.877 0.295 4.395
600 10.179 7.259 29.375 –81.334 0.058 –3.445 0.421 5.324
700 10.910 7.124 19.483 –75.831 0.098 –4.063 0.387 6.235
800 11.193 6.776 11.803 –70.096 0.127 –4.642 0.413 7.209
900 11.543 6.593 6.205 –65.171 0.192 –5.302 0.338 8.218
1000 11.387 6.328 2.208 –60.095 0.249 –5.855 0.401 9.171

Test Condition VCE = 5 V, IC = 20 mA

Freq. Yie (mS) Yfe (mS) Yre (mS) Yoe (mS)
(MHz) REAL IMAG. REAL IMAG. REAL IMAG. REAL IMAG.

100 5.863 2.308 276.917 –268.988 0.000 –0.522 0.244 0.751
200 7.022 2.660 109.913 –221.759 0.005 –1.121 0.309 1.637
300 7.375 2.861 50.698 –167.756 0.006 –1.713 0.305 2.507
400 7.527 3.094 26.179 –133.425 0.024 –2.302 0.363 3.373
500 7.607 3.429 14.053 –110.501 0.025 –2.885 0.394 4.282
600 7.562 3.893 7.198 –94.442 0.056 –3.477 0.463 5.156
700 7.537 4.211 2.859 –82.874 0.079 –4.077 0.478 6.093
800 7.383 4.635 –0.221 –73.836 0.124 –4.674 0.506 7.046
900 7.403 5.047 –2.127 –67.183 0.180 –5.312 0.444 8.018
1000 7.074 5.411 –3.292 –61.241 0.246 –5.871 0.509 8.943

8

Unit: mm

0.53 Max

0.48 Max

4.5 ± 0.1

1.8 Max

1.5

1.5

3.0

1.5 ± 0.1

0.4

φ

1

0.44 Max

(1.5)

(2.5)

2.5 ± 0.1

4.25 Max

0.44 Max

(0.4)

(0.2)

0.8 Min

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

UPAK
—
Conforms

0.050 g

Cautions

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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products.

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